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GBJ2508-05-G

Description
Bridge rectifier VR=800V IAV=25.0A
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    Bridge rectifier   
File Size92KB,5 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
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GBJ2508-05-G Overview

Bridge rectifier VR=800V IAV=25.0A

GBJ2508-05-G Parametric

Parameter NameAttribute value
MakerComchip Technology
Product Categorybridge rectifier
RoHStransition period
seriesGBJ2508
EncapsulationTube
productBridge Rectifiers
Factory packaging quantity15
unit weight6.810 g
Glass Passivated Bridge Rectifiers
GBJ25005-G Thru. GBJ2510-G
Reverse Voltage: 50 to 1000V
Forward Current: 25.0A
RoHS Device
Features
-Rating to 1000V PRV.
-Ideal for printed circuit board.
-Low forward voltage drop.
-High current capability.
-UL recognized file # E349301
R
GBJ
Φ0.134(3.4)
Φ0.122(3.1)
1.193(30.3)
1.169(29.7)
0.118(3.00)*45°
0.189(4.8)
0.173(4.4)
0.150(3.8)
0.134(3.4)
Φ0.134(3.4)
Φ0.122(3.1)
0.114(2.9)
0.098(2.5)
0.198
MAX
(5.1)
0.800(20.30)
0.776(19.70)
0.106(2.7)
0.096(2.3)
+
~ ~ _
Mechanical Data
-Epoxy: UL 94V-0 rate flame retardant.
-Case: Molded plastic, GBJ
-Mounting position: Any
-Weight: 6.81grams
0.094(2.4)
0.078(2.0)
0.043(1.1)
0.035(0.9)
0.165(4.2)
0.142(3.6)
0.708(18.0)
0.669(17.0)
0.441(11.2)
0.425(10.8)
0.402(10.2) 0.303(7.7) 0.303(7.7)
SPACING
0.386(9.8) 0.287(7.3) 0.287(7.3)
0.031(0.8)
0.023(0.6)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
(With heatsink Note 2)
Rectified Current @Tc=100°C (without heatsink)
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
GBJ
25005-G
50
35
50
GBJ
2501-G
100
70
100
GBJ
2502-G
200
140
200
GBJ
2504-G
400
280
400
25.0
4.2
350
1.0
10.0
500
508
85
0.6
-55 to +150
-55 to +150
GBJ
2506-G
600
420
600
GBJ
2508-G
800
560
800
GBJ
2510-G
1000
700
1000
Unit
V
V
V
A
A
Peak Forward Surge Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load
(JEDEC Method)
Maximum Forward Voltage at 12.5A DC
Maximum DC Reverse Current
At Rate DC Blocking Voltage
I T Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element
(Note 1)
T
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
2
V
F
I
R
It
C
J
R
θJC
T
J
T
STG
2
V
μA
As
pF
°C/W
°C
°C
2
@T
J
=25°C
@T
J
=125°C
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Device mounted on 300mm*300mm*1.6mm Cu plate heatsink.
Company reserves the right to improve product design , functions and reliability without notice.
QW-BBR60
REV: F
Page 1
Comchip Technology CO., LTD.
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