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TSM200N03DPQ33 RGG

Description
MOSFET MOSFET, Dual, N-Ch Trench, 30V, 20A
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size579KB,7 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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TSM200N03DPQ33 RGG Overview

MOSFET MOSFET, Dual, N-Ch Trench, 30V, 20A

TSM200N03DPQ33 RGG Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Product CategoryMOSFET
technologySi
Installation styleSMD/SMT
Package/boxPDFN33-8
Number of channels2 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage30 V
Id-continuous drain current20 A
Rds On - drain-source on-resistance17 mOhms
Vgs th-gate-source threshold voltage1.2 V
Vgs - gate-source voltage10 V
Qg-gate charge4.1 nC
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
Pd-power dissipation20 W
ConfigurationDual
channel modeEnhancement
EncapsulationCut Tape
EncapsulationReel
Transistor typeDual N-Channel PowerMOSFET
Forward transconductance - minimum13 S
Fall time4.6 ns
Rise Time7.2 ns
Factory packaging quantity5000
Typical shutdown delay time15.8 ns
Typical switch-on delay time2.8 ns
TSM200N03D
Taiwan Semiconductor
Dual N-Channel MOSFET
30V, 20A, 20mΩ
FEATURES
Fast switching
100% avalanche tested
Pb-free plating
Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21 definition
KEY PERFORMANCE PARAMETERS
PARAMETER
V
DS
R
DS(on)
(max)
Q
g
V
GS
= 10V
V
GS
= 4.5V
VALUE
30
20
30
4.1
nC
UNIT
V
APPLICATIONS
● Power Supply
● Motor Control
PDFN33 Dual
Dual N-Channel MOSFET
Note:
MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
SYMBOL
V
DS
V
GS
T
C
= 25°C
T
C
= 100°C
I
D
I
DM
P
DTOT
E
AS
I
AS
T
J
,T
STG
+
(Note 3)
(Note 3)
LIMIT
30
±20
20
13
80
20
14
17
- 55 to 150
UNIT
V
V
A
A
W
mJ
A
°C
(Note 2)
Total Power Dissipation @ T
C
= 25°C
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL
R
ӨJC
R
ӨJA
LIMIT
6.4
62
UNIT
°C/W
°C/W
Notes:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air
Document Number:DS_P0000166
1
Version: B1710
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