1N4933, 1N4934, 1N4935, 1N4936, 1N4937
www.vishay.com
Vishay General Semiconductor
Fast Switching Plastic Rectifier
FEATURES
• Fast switching for high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-204AL (DO-41)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
I
R
V
F
T
J
max.
Package
Diode variation
1.0 A
50 V, 100 V, 200 V, 400 V, 600 V
30 A
200 ns
5.0 μA
1.2 V
150 °C
DO-204AL (DO-41)
Single die
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
Note
• These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case:
DO-204AL, molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 75 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Maximum reverse recovery current
Operating junction and storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
RM
T
J
, T
STG
1N4933
50
35
50
1N4934
100
70
100
1N4935
200
145
200
1.0
30
2.0
- 50 to + 150
1N4936
400
280
400
1N4937
600
420
600
UNIT
V
V
V
A
A
A
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
TEST CONDITIONS
1.0 A
T
A
= 25 °C
T
A
= 100 °C
I
F
= 1.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
4.0 V, 1 MHz
SYMBOL
V
F
I
R
t
rr
C
J
1N4933
1N4934
1N4935
1.2
5.0
100
200
12
1N4936
1N4937
UNIT
V
μA
ns
pF
Revision: 24-Jul-13
Document Number: 88508
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N4933, 1N4934, 1N4935, 1N4936, 1N4937
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)
R
JL
(1)
1N4933
1N4934
1N4935
55
25
1N4936
1N4937
UNIT
°C/W
Note
(1)
Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
ORDERING INFORMATION
(Example)
PREFERRED P/N
1N4933-E3/54
1N4933-E3/73
UNIT WEIGHT (g)
0.33
0.33
PREFERRED PACKAGE CODE
54
73
BASE QUANTITY
5500
3000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
1.0
30
T
A
= 75 °C
8.3 ms
Single
Half
Sine-Wave
1.0 Cycle
20
0.8
0.375" (9.5 mm)
Lead Length
0.6
0.4
Capacitive
Loads
I
pk
5.0
=
I
AV
10
20
0
25
50
75
100
125
I
pk
=
π
I
AV
Peak Forward
Surge
Current (A)
175
10
0.2
0
150
0
1
10
100
Ambient Temperature (°C)
Fig. 1 - Forward Current Derating Curves
Number of Cycles at 60 Hz
Fig. 3 - Maximum Non-repetitive Peak Forward Surge Current
1.2
1.0
0.8
D = 0.1
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
T
D = 0.3
D = 0.2
D = 1.0
D = 0.8
D = 0.5
10
Instantaneous Forward Current (A)
Average Power Loss (W)
1
T
J
= 25 °C
0.1
Pulse Width = 300 μs
1 % Duty Cycle
D = t
p
/T
t
p
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics
Revision: 24-Jul-13
Document Number: 88508
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N4933, 1N4934, 1N4935, 1N4936, 1N4937
www.vishay.com
100
100
Vishay General Semiconductor
Typical Thermal Impedance (°C/W)
80
100
Instantaneous Reverse Current (μA)
10
T
J
= 100 °C
10
1
1
0.1
T
J
= 25 °C
0.01
0
20
40
60
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Characteristics
100
t - Pulse Duration (s)
Fig. 7 - Typical Transient Thermal Impedance
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Note
0.026
0.66
-
• Lead diameter is
---------------------------------
for suffix “E” part numbers
0.023
0.58
Revision: 24-Jul-13
Document Number: 88508
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000
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