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BT131-800E,412

Description
Triac
CategoryAnalog mixed-signal IC    Trigger device   
File Size267KB,14 Pages
ManufacturerWeEn Semiconductors
Download Datasheet Parametric View All

BT131-800E,412 Overview

Triac

BT131-800E,412 Parametric

Parameter NameAttribute value
MakerWeEn Semiconductors
package instructionPLASTIC, SC-43A, 3 PIN
Reach Compliance Codeunknown
Factory Lead Time6 weeks
Other featuresSENSITIVE GATE
ConfigurationSINGLE
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Maximum rms on-state current1 A
GuidelineIEC-60134
Off-state repetitive peak voltage800 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Trigger device type4 QUADRANT LOGIC LEVEL TRIAC
BT131-800E
4Q Triac
4 October 2016
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT54 plastic package. This sensitive
gate "series E" triac is intended for interfacing with low power drivers including microcontrollers.
2. Features and benefits
Direct interfacing to logic level ICs
Direct interfacing with low power gate drivers and microcontrollers
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Sensitive gate in four quadrants
Triggering in all four quadrants
3. Applications
Air conditioner indoor fan control
General purpose low power motor control
General purpose switching and phase control
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
lead
≤ 51 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
-
-
-
Typ
-
-
-
-
-
-
-
-
Max
800
1
12.5
13.7
125
10
10
10
Unit
V
A
A
A
°C
mA
mA
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
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