DG485
Vishay Siliconix
Octal Analog Switch Array
FEATURES
D
D
D
D
D
D
Low On-Resistance: 55
W
Rail-to-Rail Analog Input Range
Serial Interface
Low-Power—P
D
: 35 nW
TTL and CMOS Compatible
Any Combination of 8 SPST to the
Output
D
High Speed—t
ON
: 170 ns
BENEFITS
D
Low Signal Distortion
D
Devices Can Be Chained for System
Expansion
D
Reduced Board Space
D
Reduced Switch Errors
D
Reduced Power Supply
Requirements
D
Simple Interfacing
APPLICATIONS
D
Audio Switching and Routing
D
Audio Teleconferencing
D
Data Acquisition and Industrial
Process Control
D
Battery Powered Remote Systems
D
Automotive, Avionics and ATE
Systems
D
Summing Amplifiers
DESCRIPTION
The DG485 is an analog switch array consisting of eight SPST
switches connected to a common output. This device may be
used as an 8-channel multiplexer in serial control applications.
Any, all or none of the eight switches may be closed at any
given time. Combining low on-resistance (r
DS(on)
55
W
, typ.)
and fast switching (t
ON
: 170 ns, typ.), the DG485 is ideally
suited for data acquisition, process control, communication,
and avionic applications.
serial output (D
OUT
) allow daisy chaining of multiple arrays for
large systems.
Built on the Vishay Siliconix high voltage silicon gate process
the DG485 has a wide 44-V power supply voltage rating. An
epitaxial layer prevents latchup.
Control data is input serially into the shift register with each
clock pulse. The shift register contents can be latched-in (via
LD) at any point into an octal latch which in turn controls all
switches. RS resets the shift register, forcing all latch inputs to
a low condition (all switches off). The serial input (D
IN
) and
Each channel conducts equally well in either direction when on
and blocks up to rail-to-rail voltages when off.
For additional information please refer to application note
AN204.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Dual-In-Line
LD
V
L
S
4
S
3
S
2
S
1
V+
D
IN
CLK
RS
GND
D
S
5
S
6
S
7
S
8
V–
D
OUT
S
4
S
3
S
2
S
1
V+
4
5
6
7
8
Shift Register/Latches
9
D IN
10 11 12 13
CLK
DOUT
NC
V–
18
17
16
15
14
D
S
5
S
6
S
7
S
8
PLCC and LCC
GND
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VL
NC
1
RS
LD
2
1
2
3
4
5
6
7
8
9
Shift Register
Latches
18
17
16
15
14
13
12
11
10
3
20 19
Top View
Top View
Document Number: 70065
S-52433—Rev. E, 06-Sep-99
5-1
DG485
Vishay Siliconix
TRUTH TABLES AND ORDERING INFORMATION
TRUTH TABLE DUAL IN LINE PACKAGE
RS
1
1
1
0
X
TRUTH TABLE PLCC & LCC PACKAGES
LD*
D
n
0
1
D
n
*LD Input Level Triggered
CLK*
D
IN
0
1
X
X
D
1
0
1
D
1
0
D
n
D
n-1
D
n-1
D
n
(No Change)
0
L
n
0
1
L
n
SW
n
OFF
ON
(No Change)
*CLK Input Edge Triggered
ORDERING INFORMATION
Temp Range
–40 to 85_C
20-Pin PLCC
–55 to 125_C
LCC-20
DG485DN
DG485AZ/883
Package
18-Pin Plastic DIP
Part Number
DG485DJ
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V–
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputs
a
V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) + 2 V
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature
(AZ Suffix) . . . . . . . . . . . . . . . . . . –65 to 150_C
(DJ, DN Suffix) . . . . . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)
b
18-Pin Plastic DIP
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
20-Pin PLCC, LCC
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mW
Notes:
a. Signals on S
X
, D
X
or IN
X
exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 6 mW/_C above 75_C.
d. Derate 10 mW/_C above 75_C.
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Document Number: 70065
S-52433—Rev. E, 06-Sep-99
DG485
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Delta Drain-Source
On-Resistance
g
Switch Off
Leakage Current
L k
C
t
V
ANALOG
r
DS(on)
Dr
DS(on)
I
S(off)
I
D(off)
V+ = 13.5 V, V– = –13.5 V
I
S
= –5 mA, V
D
=
"10
V
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
Room
55
6
0.01
0.1
0.11
–1
–20
–10
–200
–20
–500
1
20
10
200
20
500
–1
–10
–10
–50
–20
–50
1
10
10
50
20
50
–15
15
85
125
–15
15
85
125
V
W
%
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Symbol
V+ = 15 V, V– = –15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
,
V+ = 16.5 V, V– = –16.5 V
V
D
=
#15.5
V V
S
=
"15.5
V
15 5 V,
15 5
V" =
"16.5
V V
S
= V
D
=
"15.5
V
One Switch At A Time
V" =
"16.5
V, V
S
= V
D
=
"15.5
V
All Switches On
nA
A
Channel On
Leakage Current
L k
C
t
I
D(on)
0.2
Input
Input Current
with V
IN
Low
Input Current
with V
IN
High
I
IL
I
IH
V
IN
Under Test = 0.8 V
All Other = 2.4 V
V
IN
Under Test = 2.4 V
All Other = 0.8 V
Room
Full
Room
Full
–0.0001
0.0001
–1
–5
–1
–5
1
5
1
5
–1
–5
–1
–5
1
5
1
5
mA
Serial Data Output
Output Voltage
with V
IN
Low – D
OUT
Output Voltage
with V
IN
High – D
OUT
V
OL
V
OH
I
O
= 1.6 mA, V+ = 4.5 V
I
O
= –80
mA,
V+ = 16.5 V
V
L
= 4.75 V
Full
Full
0.25
4.4
2.7
0.4
2.7
0.4
V
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Data Setup Time
Data Hold Time
LOAD Hold Time
RESET Hold Time
RESET
"
to CLOCK
"
Delay
Charge Injection
Off Isolation
e
Maximum
Clock Frequency
t
ON
t
OFF
t
DS
See Figures 4, 8
t
DH
t
LH
t
RH
t
DRC
Q
OIRR
f
CLK
V
S
= 0 V, C
L
= 1,000 pF
Any One Channel
R
L
= 50
W
, C
L
= 5 pF, f = 1 MHz
See Figure 9
See Figures 5 8
S Fi
5,
V
S
=
"10
V
See Figures 1, 8
V
S
=
"10
V
See Figures 2, 3, 8
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Room
Room
17
–75
10
170
150
40
60
40
60
100
150
100
150
40
60
200
275
200
275
40
60
40
60
100
150
100
150
40
60
pC
dB
MHz
ns
200
275
200
276
Document Number: 70065
S-52433—Rev. E, 06-Sep-99
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5-3
DG485
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
Parameter
Symbol
V+ = 15 V, V– = –15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
Dynamic Characteristics (Cont’d)
Source Off
Capacitance
e
Drain Off Capacitance
e
C
S(off)
C
D(off)
V
gen
= 0 V, R
gen
= 0
W
, f = 1 MHz One
Channel On
V
gen
= 0 V, R
gen
= 0
W
, f = 1 MHz All Chan-
nels On
V
gen
= 0 V, R
gen
= 0
W ,
f = 1 MHz
,
Room
Room
Room
Room
7
43
53
122
pF
F
On-State Capacitance
e
C
D(on)
Power Supplies
Positive Supply
Current
Negative Supply
Current
Logic Supply Current
Ground Current
I+
I–
I
L
I
GND
V+ 16 5 V V
V = 16.5 V, V– = –16.5 V
16 5
V
IN
= 0 or 5 V, V
L
= 5.25 V
D
OUT
Open
Room
Full
Room
Full
Room
Full
Room
Full
0.001
–0.001
0.001
–0.001
–3
–10
–3
–10
3
10
–3
–10
3
10
–3
–10
3
10
3
10
A
mA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
V
IN
= input voltage to perform proper function.
r
DS(on)
MAX – r
DS(on)
MIN
g. For each V :
Dr
+
D
DS(on)
r
AVE
DS(on)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1 mA
100 nA
10 nA
GND
Supply Currents vs. Temperature
r DS(on) Drain-Source On-Resistance (
W
)
–
V+ = 15 V
V– = –15 V
V
L
= 5 V
160
140
120
100
80
60
40
20
0
–30
–10
10
30
50
70
90
110
130
–20
r
DS(on)
vs. V
D
and Power Supply Voltage
V
L
= 5 V
I
S
= –5 mA
I
POS
1 nA
100 pA
10 pA
1 pA
0.1 pA
–50
I
GND
I
NEG
I
L
"5
V
I+, I–, I
"8
V
"10
V
"12
V
"15
V
"20
V
–15
–10
–5
0
5
10
15
20
Temperature (_C)
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V
D
– Drain Voltage (V)
Document Number: 70065
S-52433—Rev. E, 06-Sep-99
5-4
DG485
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
DS(on)
vs. V
D
and Unipolar Power Supply Voltage
400
r DS(on) Drain-Source On-Resistance (
W
)
–
350
300
250
200
150
100
50
0
0
2
4
6
8
10
12
14
16
18
20
V
D
– Drain Voltage (V)
8V
10 V
12 V
15 V
20 V
V+ = 5 V
r DS(on) Drain-Source On-Resistance (
W
)
–
V– = 0 V
V
L
= 5 V
I
S
= –5 mA
100
90
80
70
60
50
40
30
20
10
0
–15
–10
–5
0
5
10
15
V
D
– Drain Voltage (V)
V+ = 15 V
V– = –15 V
V
L
= 5 V
I
S
= –5 mA
–55_C
25_C
125_C
r
DS(on)
vs. V
D
and Temperature
Channel On/Off Leakage Currents
vs. Analog Voltage
60
40
20
I
S(off)
I D, I S
0
–20
–40
I
D(off)
I
D(on)
V+ = 15 V
V– = –15 V
V
L
= 5 V
1 mA
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
Channel On/Off Leakage Currents
vs. Temperature
V+ = 15 V
V– = –15 V
V
L
= 5 V
V
S
or V
D
= – 14 V
I S, I D , I S + D (pA)
I
D(on)
I
S(off)
I
D(off)
–60
–80
–15
–10
–5
0
5
10
15
0.1 pA
0.01 pA
–50
–30
–10
10
30
50
70
90
110
130
V
D
or V
S
– Drain or Source Voltage (V)
Temperature (_C)
Switching Threshold
vs. Power Supply Voltage and V
L
3.0
5V
6V
2.0
V TH (V)
V
L
= 7 V
RF Characteristics
–140
–120
–100
OIRR
–80
(dB)
X
TALK
2.5
1.5
4V
1.0
–60
–40
V+ = 15 V
V– = –15 V
V
L
= 5 V
See Figures 9, 10
0.5
–20
0
5
6
7
8
9
10
11
12
13
14
15
1k
10 k
100 k
f – Frequency (Hz)
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1M
10 M
V+ Supply (V)
0
Document Number: 70065
S-52433—Rev. E, 06-Sep-99
5-5
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