Rev.
2.2
BSP125
SIPMOS
Power-Transistor
Feature
•
N-Channel
•
Enhancement mode
•
Logic Level
•
dv/dt rated
Product Summary
V
DS
600
45
0.12
PG-SOT223
V
Ω
A
R
DS(on)
I
D
•
Pb-free lead plating; RoHS compliant
Qualified according to AEC Q101
•
Halogenfree according to IEC61249221
RoHS compliant
Tape and Reel Information
Marking
Packaging
BSP125
Non dry
H6433:
4000 pcs/reel
BSP125 PG-SOT223
Yes
Type
Package
BSP125 PG-SOT223
Yes
H6327:
1000 pcs/reel
BSP125 Non dry
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T
A
=25°C
T
A
=70°C
Value
0.12
0.1
0.48
6
Unit
A
I
D
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
T
j ,
T
stg
Reverse diode dv/dt
I
S
=0.12A,
V
DS
=480V, di/dt=200A/µs,
T
jmax
=175°C
kV/µs
V
W
°C
Gate source voltage
ESD
Class (JESD22-A114-HBM)
Power dissipation
T
A
=25°C,
T
A
=25
±20
1A (>250V, <500V)
1.8
-55... +150
55/150/56
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2012-11-27
Rev.
2.2
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
BSP125
Symbol
min.
R
thJS
R
thJA
-
-
-
Values
typ.
-
max.
25
Unit
K/W
-
-
115
70
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=0.25mA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
600
1.3
Values
typ.
-
1.9
max.
-
2.3
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=94µA
Zero gate voltage drain current
V
DS
=600V,
V
GS
=0,
T
j
=25°C
V
DS
=600V,
V
GS
=0,
T
j
=125°C
µA
-
-
10
26
25
0.1
5
100
60
45
nA
Ω
Gate-source leakage current
V
GS
=20V,
V
DS
=0
Drain-source on-state resistance
V
GS
=4.5V,
I
D
=0.11A
Drain-source on-state resistance
V
GS
=10V,
I
D
=0.12A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2012-11-27
Rev.
2.2
BSP125
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
DD
=400V,
I
D
=0.13A,
V
GS
=0 to 10V
V
DD
=400V,
I
D
=0.13A
Symbol
Conditions
min.
Values
typ.
0.18
100
8.2
3.2
7.7
14.4
20
110
max.
-
150
12.3
4.8
11.6
21
30
165
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=0.1A
V
GS
=0,
V
DS
=25V,
f=1MHz
0.06
-
-
-
-
-
-
-
S
pF
V
DD
=300V,
V
GS
=10V,
I
D
=0.13A,
R
G
=6Ω
ns
-
-
-
-
0.27
2.3
4.4
3.44
0.3
3.5
6.6
-
nC
V
(plateau)
V
DD
=400V,
I
D
=0.13A
V
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsedI
SM
Inverse diode forward voltage
V
SD
Reverse recovery time
t
rr
Reverse recovery charge
Q
rr
V
GS
=0,
I
F
=0.12A
V
R
=300V,
I
F=
l
S
,
di
F
/dt=100A/µs
I
S
T
A
=25°C
-
-
-
-
-
-
-
0.8
156
165
0.12
0.48
1.2
235
250
A
V
ns
nC
Page 3
2012-11-27
Rev.
2.2
1 Power dissipation
P
tot
=
f
(T
A
)
1.9
BSP125
BSP125
2 Drain current
I
D
=
f
(T
A
)
parameter:
V
GS
≥
10 V
0.13
BSP125
W
1.6
1.4
A
0.11
0.1
0.09
P
tot
I
D
20
40
60
80
100
120
1.2
1
0.8
0.08
0.07
0.06
0.05
0.6
0.4
0.2
0
0
0.04
0.03
0.02
0.01
°C
160
0
0
20
40
60
80
100
120
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25
10
1
BSP125
4 Transient thermal impedance
Z
thJA
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
2
BSP125
A
K/W
10
0
10
1
/
I
D
10
-1
R
)
on
S(
D
=
V
DS
1 ms
Z
thJC
10
0
D = 0.50
t
= 270.0µs
p
I
D
10 ms
0.20
0.10
10
-2
10
-1
single pulse
DC
0.05
0.02
0.01
10
-3 0
10
10
1
10
2
V
10
3
10
-2 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10
s
10
4
V
DS
Page 4
t
p
2012-11-27
Rev.
2.2
5 Typ. output characteristic
I
D
=
f
(V
DS
)
parameter:
T
j
= 25 °C,
V
GS
0.3
BSP125
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
T
j
= 25 °C,
V
GS
100
10V
6.0V
A
5.0V
4.0V
3.8V
3.6V
3.2V
0.2
3.0V
2.8V
2.6V
0.15
Ω
R DS(on)
60
2.6V
2.8V
3.0V
3.2V
3.6V
4.0V
5.0V
6.0V
10V
ID
40
0.1
20
0.05
0
0
1
2
3
4
5
6
7
8
V
10
0
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
A
0.5
VDS
ID
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
≥
2 x
I
D
x
R
DS(on)max
parameter:
T
j
= 25 °C
0.5
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter:
T
j
= 25 °C
0.4
S
A
0.3
gfs
V
ID
0.3
0.25
0.2
0.2
0.15
0.1
0.1
0.05
0
0
0.5
1
1.5
2
2.5
3
3.5
4
5
0
0
0.1
0.2
0.3
A
0.5
VGS
ID
Page 5
2012-11-27
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