RN1106F datasheet, PDF - EEWORLD Datasheet

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RN1106F: DescriptionSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications; CategoryDiscrete semiconductor The transistor; File Size570KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN1106F Overview

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1106F Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.1 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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RN1101F∼RN1106F

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

RN1101F,RN1102F,RN1103F

RN1104F,RN1105F,RN1106F

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Unit in mm

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2101F~RN2106F

Equivalent Circuit And Bias Resister Values

Type No.

RN1101F

RN1102F

RN1103F

RN1104F

RN1105F

RN1106F

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

EIAJ

TOSHIBA

―

2-2H1A

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1101F~1106F

RN1101F~1104F

RN1105F, 1106F

Symbol

CBO

CEO

EBO

stg

Rating

100

150

−55~150

Weight: 2.3 mg

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

RN1106F Related Products

	RN1106F	RN1101F	RN1101F_07	RN1102F	RN1103F	RN1104F	RN1105F
Description	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Is it Rohs certified?	incompatible	incompatible	-	incompatible	incompatible	incompatible	incompatible
Maker	Toshiba Semiconductor	Toshiba Semiconductor	-	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	-	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
Contacts	3	3	-	3	3	3	3
Reach Compliance Code	unknow	unknow	-	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 10	BUILT-IN BIAS RESISTOR RATIO IS 1	-	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 21.36
Maximum collector current (IC)	0.1 A	0.1 A	-	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	-	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80	30	-	50	70	80	80
JESD-30 code	R-PDSO-F3	R-PDSO-F3	-	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3
Number of components	1	1	-	1	1	1	1
Number of terminals	3	3	-	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	-	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.1 W	0.1 W	-	0.1 W	0.1 W	0.1 W	0.1 W
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	-	YES	YES	YES	YES
Terminal form	FLAT	FLAT	-	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	-	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	-	250 MHz	250 MHz	250 MHz	250 MHz
JESD-609 code	-	e0	-	e0	e0	e0	e0
Terminal surface	-	TIN LEAD	-	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD

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