1N5392G datasheet, PDF - EEWORLD Datasheet

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1N5392G: Description1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-15; CategoryDiscrete semiconductor diode; File Size52KB，2 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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1N5392G Overview

1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-15

1N5392G Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	O-PALF-W2
Reach Compliance Code	unknown
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.4 V
JEDEC-95 code	DO-15
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	50 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-50 °C
Maximum output current	1.5 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	5 µA
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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LESHAN RADIO COMPANY, LTD.

1N5391G – 1N5399G

1.5A

1.5A GENERAL PURPOSE GPP DIODES

Maximum Average

TYPE

Maximum

Peak Reverse

Voltage

PRV

Rectified Current

@ Half-Wave

Resistive Load 60Hz

@ T

ºC

Maximum

Forward Peak

Surge Current @

8.3ms Superimposed

(Surge)

Maximum

Reverse

Current @ PRV

@ T

=25ºC

Maximum

Forward

Voltage

@ T

=25ºC

Package

Dimensions

µAdc

1N5391G

1N5392G

1N5393G

1N5394G

1N5395G

1N5396G

1N5397G

1N5398G

1N5399G

100

200

300

400

500

600

800

1000

1.5

5.0

1.5

1.4

DO – 41

1.0(25.4)

MIN

.205(5.2)

.166(4.2)

1.0(25.4)

MIN

.034(0.9)

.028(0.7)

DIA

.107(2.7) DIA

.080(2.0)

DO – 41

32A–1/2

1N5392G Related Products

	1N5392G	1N5391G	1N5393G	1N5395G	1N5396G	1N5397G	1N5399G
Description	1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-15	RECTIFIER DIODE, DO-15	1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-15	1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15	RECTIFIER DIODE, DO-15	1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15	RECTIFIER DIODE, DO-15
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknow	unknown
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.4 V	1.4 V	1.4 V	1.4 V	1.4 V	1.4 V	1.4 V
JEDEC-95 code	DO-15	DO-15	DO-15	DO-15	DO-15	DO-15	DO-15
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	50 A	50 A	50 A	50 A	50 A	50 A	50 A
Number of components	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C
Maximum output current	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	100 V	50 V	200 V	400 V	500 V	600 V	1000 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maker	LRC	LRC	LRC	LRC	LRC	-	LRC

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