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D3S650N65B-U

Description
MOSFET 650 mOhm 650V Superjunction Power MOSFET in TO-220
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size990KB,10 Pages
ManufacturerD3
Environmental Compliance
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D3S650N65B-U Overview

MOSFET 650 mOhm 650V Superjunction Power MOSFET in TO-220

D3S650N65B-U Parametric

Parameter NameAttribute value
MakerD3
Product CategoryMOSFET
technologySi
Installation styleThrough Hole
Package/boxTO-220-3
Number of channels1 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage650 V
Id-continuous drain current6.2 A
Rds On - drain-source on-resistance600 mOhms
Vgs th-gate-source threshold voltage2.3 V
Vgs - gate-source voltage30 V
Qg-gate charge9.4 nC
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
Pd-power dissipation56 W
ConfigurationSingle
channel modeEnhancement
EncapsulationTube
Transistor type1 N-Channel
Fall time10 ns
Rise Time9 ns
Factory packaging quantity50
Typical shutdown delay time12 ns
Typical switch-on delay time6 ns
unit weight1.800 g
®
D3S650N65x
650V, 650mΩ, 4.6A N-Channel Enhancement Mode Super Junction Power MOSFET
Ordering Information
Part Number
D3S650N65B-U
D3S650N65E-U
Package Options
Package Option
TO-220
TO-263
TO-220
Device Schematic
Drain (Pin 2, Tab)
TO-263
Description
+FET is an advanced Super Junction Power MOSFET offering
excellent efficiency through low Rds-ON and low gate
charge. +FET
TM
is a rugged device with precision charge
balance implementation designed for demanding uses such as
enterprise power computing power supplies, motor control,
lighting and other challenging power conversion applications.
TM
Gate
(Pin 1)
Source
(Pin 3)
Features
LOW R
DS(ON)
FAST SWITCHING
HIGH E
AS
REL TEST SPEC: JESD-22
HTRB >3000 HRS
Benefits
LOW CONDUCTION LOSSES
HIGH EFFICIENCY
EXCELLENT AVALANCHE PERFORMANCE
Table 1
Key Parameters
Parameter
V
DSS
@ T
jmax
RDS(on) max
Qg typ
I
Dmax
@
25 ºC
Value
710
< 650
9
7.5
Unit
V
mΩ
nC
A
Applications
POWER FACTOR CORRECTION
SERVER POWER SUPPLIES
TELECOM POWER SUPPLIES
INVERTERS
MOTOR CONTROL
Copyright D3 Semiconductor 2017 – All Rights Reserved

D3S650N65B-U Related Products

D3S650N65B-U D3S650N65E-U
Description MOSFET 650 mOhm 650V Superjunction Power MOSFET in TO-220 MOSFET 650 mOhm 650V Superjunction Power MOSFET in TO-263 (D2Pak)
Maker D3 D3
Product Category MOSFET MOSFET
technology Si Si
Installation style Through Hole SMD/SMT
Package/box TO-220-3 TO-263-3
Number of channels 1 Channel 1 Channel
Transistor polarity N-Channel N-Channel
Vds - drain-source breakdown voltage 650 V 650 V
Id-continuous drain current 6.2 A 6.2 A
Rds On - drain-source on-resistance 600 mOhms 600 mOhms
Vgs th-gate-source threshold voltage 2.3 V 2.3 V
Vgs - gate-source voltage 30 V 30 V
Qg-gate charge 9.4 nC 9.4 nC
Minimum operating temperature - 55 C - 55 C
Maximum operating temperature + 150 C + 150 C
Pd-power dissipation 56 W 56 W
Configuration Single Single
channel mode Enhancement Enhancement
Encapsulation Tube Tube
Transistor type 1 N-Channel 1 N-Channel
Fall time 10 ns 10 ns
Rise Time 9 ns 9 ns
Factory packaging quantity 50 50
Typical shutdown delay time 12 ns 12 ns
Typical switch-on delay time 6 ns 6 ns
unit weight 1.800 g 2.200 g
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