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B6M-E3/80

Description
Bridge Rectifier 0.5 Amp 600 Volt
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    Bridge rectifier   
File Size84KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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B6M-E3/80 Overview

Bridge Rectifier 0.5 Amp 600 Volt

B6M-E3/80 Parametric

Parameter NameAttribute value
MakerVishay
Product Categorybridge rectifier
typeSingle Phase Bridge
Installation styleSMD/SMT
Termination typeSMD/SMT
Package/boxMBM
Peak reverse voltage600 V
Vf - forward voltage1 V
Maximum surge current30 A
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
length4.83 mm
width4.1 mm
high2.7 mm
EncapsulationReel
productBridge Rectifiers
Ir - 反向电流 5 uA
Factory packaging quantity3000
Vr - 反向电压 420 V
unit weight220 mg
B2M, B4M, B6M
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase Bridge Rectifiers
~
~
FEATURES
• UL recognized, file number E54214
• Ideal for printed circuit boards
• Applicable for automative insertion
• Middle surge current capability
• Recommended for non-automotive applications
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
~
TYPICAL APPLICATIONS
~
Case Style MBM
General purpose use in AC/DC bridge full wave rectification
for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 0.5 A
T
J
max.
Diode variations
MBM
0.5 A
200 V, 400 V, 600 V
30 A
5 μA
1.0 V
150 °C
Quad
MECHANICAL DATA
Case:
MBM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked on body
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output rectified current (fig. 1)
on glass-epoxy PCB
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load (JEDEC method)
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
SYMBOL
B2M
B2
200
140
200
B4M
B4
400
280
400
0.5
(1)
30
5.0
- 55 to + 150
B6M
B6
600
420
600
V
V
V
A
A
A
2
s
°C
UNIT
Note
(1)
On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage drop per diode
Maximum DC reverse current at rated
DC blocking voltage per diode
Typical junction capacitance per diode
TEST CONDITIONS
I
F
= 0.5 A
T
A
= 25 °C
T
A
= 125 °C
4.0 V, 1 MHz
SYMBOL
V
F
I
R
C
J
B2M
B4M
1.0
5.0
100
13
B6M
UNIT
V
μA
pF
Revision: 16-Aug-13
Document Number: 88898
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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Minimum operating temperature - 55 C -55 °C
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