NX3P191
Logic controlled high-side power switch
Rev. 5 — 14 January 2014
Product data sheet
1. General description
The NX3P191 is a high-side load switch which features a low ON resistance P-channel
MOSFET. It has input inrush current reduction that supports more than 500 mA of
continuous current. It also has an integrated output discharge resistor to discharge the
output capacitance when disabled. Designed for operation from 1.1 V to 3.6 V, it is used in
power domain isolation applications to reduce power dissipation and extend battery life.
The enable logic includes integrated logic level translation making the device compatible
with lower voltage processors and controllers. The NX3P191 is ideal for portable, battery
operated applications due to low ground current and ultra-low shutdown current.
2. Features and benefits
Wide supply voltage range from 1.1 V to 3.6 V
Very low ON resistance:
95 m (typical) at a supply voltage of 1.8 V
High noise immunity
Low-power mode when EN is LOW
Low ground current (2
A
maximum)
1.2 V control logic at a supply voltage of 3.6 V
High current handling capability (500 mA continuous current)
Internal output discharge resistor
Turn-on slew rate limiting
ESD protection:
HBM JESD22-A114F Class 3A exceeds 4000 V
CDM AEC-Q100-011 revision B exceeds 500 V
Specified from
40 C
to +85
C
3. Applications
Cell phone
Digital cameras and audio devices
Portable and battery-powered equipment
NXP Semiconductors
NX3P191
Logic controlled high-side power switch
4. Ordering information
Table 1.
Ordering information
Package
Temperature range
NX3P191UK
40 C
to +85
C
Name
WLCSP4
Description
wafer level chip-size package; 4 bumps; body
0.76
0.76
0.51 mm. (Backside Coating
included)
Version
NX3P190/NX3P191
Type number
5. Marking
Table 2.
Marking codes
Marking code
x1
Type number
NX3P191UK
6. Functional diagram
VIN
Rdch
VOUT
EN
EN
VIN
001aao342
Rpd
LEVEL SHIFT,
SLEW RATE CONTROL
AND LOAD DISCHARGE
VOUT
aaa-000036
Fig 1.
Logic symbol
Fig 2.
Logic diagram (simplified schematic)
7. Pinning information
7.1 Pinning
bump A1
index area
A
B
aaa-000037
NX3P191
1
2
A
B
1
VIN
EN
2
VOUT
GND
001aao345
Transparent top view
Transparent top view
Fig 3.
Pin configuration for WLCSP4
Fig 4.
Ball mapping for WLCSP4
NX3P191
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 January 2014
2 of 15
NXP Semiconductors
NX3P191
Logic controlled high-side power switch
7.2 Pin description
Table 3.
Symbol
VIN
EN
VOUT
GND
Pin description
Pin
A1
B1
A2
B2
Description
input voltage
enable input (active HIGH)
output voltage
ground (0 V)
8. Functional description
Table 4.
Input EN
L
H
[1]
H = HIGH voltage level; L = LOW voltage level.
Function table
[1]
Switch
switch OFF
switch ON
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
I
V
SW
I
IK
I
SK
Parameter
input voltage
switch voltage
input clamping current
switch clamping current
Conditions
input EN
input VIN
output VOUT
input EN: V
I(EN)
<
0.5
V
input VIN: V
I(VIN)
<
0.5
V
output VOUT: V
O(VOUT)
<
0.5
V
output VOUT: V
O(VOUT)
> V
I(VIN)
0.5
V
I
SW
switch current
V
SW
>
0.5
V
T
amb
= 25 °C
T
amb
= 85 °C
T
j(max)
T
stg
P
tot
[1]
[2]
[3]
[1]
[2]
[2]
Min
0.5
0.5
0.5
50
50
50
-
-
-
40
65
[3]
Max
+4.0
+4.0
V
I(VIN)
-
-
-
50
1000
500
+125
+150
300
Unit
V
V
V
mA
mA
mA
mA
mA
mA
C
C
mW
maximum junction
temperature
storage temperature
total power dissipation
-
The minimum input voltage rating may be exceeded if the input current rating is observed.
The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed.
The (absolute) maximum power dissipation depends on the junction temperature T
j.
Higher power dissipation is allowed in conjunction
with lower ambient temperatures. The conditions to determine the specified values are T
amb
= 85 °C and the use of a two layer PCB.
NX3P191
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 January 2014
3 of 15
NXP Semiconductors
NX3P191
Logic controlled high-side power switch
10. Recommended operating conditions
Table 6.
V
I
T
amb
Recommended operating conditions
Conditions
Min
1.1
40
Max
3.6
+85
Unit
V
C
input voltage
ambient temperature
Symbol Parameter
11. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
[1][2]
Typ
130
Unit
K/W
The overall Rth(j-a) can vary depending on the board layout. To minimize the effective Rth(j-a), all pins must have a solid connection to
larger Cu layer areas e.g. to the power and ground layer. In multi-layer PCB applications, the second layer should be used to create a
large heat spreader area right below the device. If this layer is either ground or power, it should be connected with several vias to the top
layer connecting to the device ground or supply. Try not to use any solder-stop varnish under the chip.
Please rely on the measurement data given for a rough estimation of the Rth(j-a) in your application. The actual Rth(j-a) value may vary
in applications using different layer stacks and layouts
[2]
12. Static characteristics
Table 8.
Static characteristics
V
I(VIN)
= V
I(EN)
, unless otherwise specified; Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
IH
HIGH-level input
voltage
Conditions
EN input
V
I(VIN)
= 1.1 V to 1.3 V
V
I(VIN)
= 1.3 V to 1.8 V
V
I(VIN)
= 1.8 V to 3.6 V
V
IL
LOW-level input
voltage
EN input
V
I(VIN)
= 1.1 V to 1.3 V
V
I(VIN)
= 1.3 V to 1.8 V
V
I(VIN)
= 1.8 V to 3.6 V
R
pd
I
GND
I
S(OFF)
R
dch
pull-down resistance EN input
ground current
OFF-state leakage
current
V
I(VIN)
= 3.6 V; VOUT open;
see
Figure 5
and
Figure 6
V
I(VIN)
= 3.6 V; V
I(EN)
= GND;
V
O(VOUT)
= GND; see
Figure 8
-
-
-
-
-
-
-
-
-
-
4
-
0.1
280
-
-
-
-
-
-
-
-
-
-
-
2
-
-
0.3
0.4
0.45
-
-
2
-
V
V
V
M
A
A
-
-
-
-
-
-
-
-
-
1.0
1.2
1.2
-
-
-
V
V
V
T
amb
= 25
C
Min
Typ
Max
T
amb
=
40 C
to +85
C
Unit
Min
Max
discharge resistance VOUT output
NX3P191
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 January 2014
4 of 15
NXP Semiconductors
NX3P191
Logic controlled high-side power switch
12.1 Graphs
0.9
001aao346
I
GND
(μA)
0.8
0.7
0.6
1.0
I
GND
(μA)
0.8
001aao347
0.6
0.5
0.4
0.3
0.2
-40
0.2
1.2
0.4
-10
20
50
80
110
T
amb
(°C)
1.7
2.2
2.7
3.2
3.7
V
I(VIN)
(V)
V
I(VIN)
= 1.8 V; V
I(EN)
= 1.8 V; I
LOAD
= 500 mA.
V
I(EN)
= V
I(VIN)
; T
amb
= 25
C;
I
LOAD
= 500 mA.
Fig 5.
Waveform showing the ground current versus
temperature
Fig 6.
Waveform showing the ground current versus
input voltage on pin VIN
12
I
GND
(μA)
8
001aao348
V
I(VIN)
= 3.6 V
4
V
I(VIN)
= 1.8 V
0
0
1
2
3
V
I(EN)
(V)
4
Fig 7.
Waveform showing the additional ground current versus input voltage
NX3P191
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 5 — 14 January 2014
5 of 15
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