TLP3062A,TLP3062AF
Photocouplers
GaAs Infrared LED & Photo Triac
TLP3062A,TLP3062AF
1. Applications
•
•
•
•
Solid-State Relays
Triac Drivers
Home Electric Appliances
Office Equipment
2. General
The TLP3062A consists of a zero crossing photo triac, optically coupled to a gallium arsenide infrared emitting
diode. The TLP3062A is housed in the DIP6 package and guarantees insulation thickness of 0.4 mm (min).
Therefore, the TLP3062A meets the reinforced insulation class requirements of international safety standards.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Halogen-free
For details, see "Devices in Halogen-Free Resin Packages" at the end of this datasheet.
Peak off-state voltage: 600 V (min)
Zero crossing functionary (ZC)
Trigger LED current: 10 mA (max)
On-state current: 100 mA (max)
Isolation voltage: 5000 Vrms (min)
Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)
CQC-approved: GB4943.1, GB8898 Japan Factory
Note 1: When a VDE approved type is needed, please designate the Option (D4)
(D4).
Table 3.1 Mechanical Parameters
Characteristics
Creepage distances
Clearance distances
Internal isolation thickness
7.62 mm Pitch
TLP3062A
7.0 (min)
7.0 (min)
0.4 (min)
10.16 mm Pitch
TLP3062AF
8.0 (min)
8.0 (min)
0.4 (min)
Unit
mm
Start of commercial production
©2016-2018
Toshiba Electronic Devices & Storage Corporation
1
2015-08
2018-01-30
Rev.8.0
TLP3062A,TLP3062AF
4. Packaging (Note)
TLP3062A
TLP3062A(LF1,TP1)
TLP3062A(LF5,TP5)
11-7A10S
11-7A1001S
11-7A1005S
TLP3062AF
TLP3062AF(LF4,TP4)
11-7A1002S
11-7A1004S
Note:
Through-hole type: TLP3062A, TLP3062AF
Lead forming option: (LF1), (LF4), (LF5)
Taping option: (TP1), (TP4), (TP5)
5. Pin Assignment
1: Anode
2: Cathode
3: N.C.
4: Triac terminal
6: Triac terminal
ZC: Zero-cross Circuit
©2016-2018
Toshiba Electronic Devices & Storage Corporation
2
2018-01-30
Rev.8.0
TLP3062A,TLP3062AF
6. Product Naming Conventions
Type of package used for shipment is denoted by a symbol suffix after a part number. The method of classification
is as below.
Example) TLP3062A(TP1,F
Part number: TLP3062A
Tape type: TP1 (Note 1)
[[G]]/RoHS COMPATIBLE: F (Note 2)
Note 1: At the part of tape type, below options are used including lead forming type.
TLP3062A: LF1, TP1, LF5, TP5
TLP3062AF: LF4, TP4
Note 2: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
©2016-2018
Toshiba Electronic Devices & Storage Corporation
3
2018-01-30
Rev.8.0
TLP3062A,TLP3062AF
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward current
Input forward current derating
Input forward current (pulsed)
Input reverse voltage
Input power dissipation
Input power dissipation derating
Junction temperature
Detector Off-state output terminal voltage
R.M.S. on-state current
R.M.S. on-state current derating
ON-state current (pulsed)
Peak non-repetitive surge current
Output power dissipation
Output power dissipation derating
Junction temperature
Common Total power dissipation
Total power dissipation derating
Operating temperature
Storage temperature
Lead soldering temperature
Isolation voltage
(10 s)
AC, 60 s, R.H.
≤
60 %
(T
a
≥
25
)
(T
a
≥
25
)
(T
a
= 25
)
(T
a
= 70
)
(T
a
≥
25
)
∆I
T(RMS)
/∆T
a
I
ONP
I
TSM
P
O
∆P
O
/∆T
a
T
j
P
T
∆P
T
/∆T
a
T
opr
T
stg
T
sol
BV
S
(Note 4)
(Note 2)
(Note 3)
(T
a
≥
25
)
(T
a
≥
53
)
Symbol
I
F
∆I
F
/∆T
a
I
FP
V
R
P
D
∆P
D
/∆T
a
T
j
V
DRM
I
T(RMS)
(Note 1)
Note
Rating
50
-0.7
1
5
100
-1.0
125
600
100
50
-1.1
2
1.2
300
-4.0
125
400
-4.4
-40 to 100
-55 to 125
260
5000
Vrms
Unit
mA
mA/
A
V
mW
mW/
V
mA
mA
mA/
A
A
mW
mW/
mW
mW/
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW)
≤
100
µs,
100 pps
Note 2: Pulse width (PW)
≤
100
µs,
120 pps
Note 3: Pulse width (PW)
≤
10 ms
Note 4: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4 and 6 are
shorted together.
Note:
8. Recommended Operating Conditions (Note)
Characteristics
AC mains voltage
Input forward current
ON-state current (pulsed)
Operating temperature
Symbol
V
AC
I
F
I
ONP
T
opr
Note
(Note 1)
Min
15
-25
Typ.
20
Max
240
25
1
85
Unit
V
mA
A
Note:
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
Note 1: AC use only.
©2016-2018
Toshiba Electronic Devices & Storage Corporation
4
2018-01-30
Rev.8.0
TLP3062A,TLP3062AF
9. Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward voltage
Input reverse current
Input capacitance
Detector Peak off-state current
Peak on-state voltage
Holding current
Critical rate of rise of off-state
voltage
Critical rate of rise of
commutating voltage (dv/dt)
Symbol
V
F
I
R
C
t
I
DRM
V
TM
I
H
dv/dt
dv/dt(c)
Note
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1 MHz
V
DRM
= 600 V
I
TM
= 100 mA
V
in
= 240 V, T
a
= 25
See Fig. 9.1
V
in
= 60 Vrms, I
T
= 15 mA
See Fig. 9.1
Min
1.0
Typ.
1.15
30
10
1.7
0.6
2000
0.2
Max
1.3
10
1000
3.0
Unit
V
µA
pF
nA
V
mA
V/µs
Fig. 9.1 dv/dt Test Circuit and Waveform
10. Coupled Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Trigger LED current
Inhibit voltage
Inhibit current
Symbol
I
FT
V
IH
I
IH
Note
V
T
= 3 V
I
F
= Rated I
FT
I
F
= Rated I
FT
, V
T
=Rated V
DRM
Test Condition
Min
Typ.
200
Max
10
20
600
Unit
mA
V
µA
11. Isolation Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Total capacitance (input to
output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Condition
Min
1
×
10
12
5000
Typ.
0.8
10
14
10000
10000
Max
Vdc
Unit
pF
Ω
Vrms
(Note 1) V
S
= 0 V, f = 1 MHz
(Note 1) V
S
= 500 V, R.H.
≤
60%
(Note 1) AC, 60 s
AC, 1 s in oil
DC, 60 s in oil
Note 1: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4 and 6 are
shorted together.
©2016-2018
Toshiba Electronic Devices & Storage Corporation
5
2018-01-30
Rev.8.0
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