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BYG20G R3G

Description
Rectifier 1.5 AMPS, 400V High Efficient
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    rectifier   
File Size370KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BYG20G R3G Overview

Rectifier 1.5 AMPS, 400V High Efficient

BYG20G R3G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Product CategoryRectifier
Installation styleSMD/SMT
Vr - 反向电压 400 V
If - forward current1.5 A
typeStandard Recovery Rectifiers
ConfigurationSingle
Vf - forward voltage1.4 V
Maximum surge current30 A
Ir - 反向电流 10 uA
Recovery Time75 ns
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
EncapsulationCut Tape
EncapsulationReel
productRectifiers
Factory packaging quantity1800
BYG20D - BYG20J
Taiwan Semiconductor
CREAT BY ART
1.5A, 200V - 600V High Efficient Surface Mount Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Fast switching for high efficiency
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DO-214AC (SMA)
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound: UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.064 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage
(Note 1)
Maximum reverse current @ rated V
R
Pulse energy in avalanche mode, non repetitive
(Inductive load switch off ), L=120mH
Maximum reverse recovery time (Note 2)
Typical thermal resistance (Note 3)
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Mount on PC board with 5mm x 5mm copper pads as heatsink.
I
F
=1.0A
I
F
=1.5A
T
J
=25°C
T
J
=100°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
E
RSM
t
rr
R
θJL
R
θJA
T
J
T
STG
BYG20D
200
140
200
BYG20G
400
280
400
1.5
30
1.3
1.4
1
10
20
75
25
100
- 55 to +150
- 55 to +150
BYG20J
600
420
600
UNIT
V
V
V
A
A
V
μA
mJ
ns
°C/W
°C
°C
Document Number: DS_D0000075
Version: E15
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