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B5818W RHG

Description
Schottky Diode and RectifierSchottky 30v 500mW
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    Schottky diode rectifier   
File Size356KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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B5818W RHG Overview

Schottky Diode and RectifierSchottky 30v 500mW

B5818W RHG Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Product CategorySchottky diodes and rectifiers
productRectifiers
EncapsulationCut Tape
EncapsulationReel
Factory packaging quantity3000
B5817W/B5818W/B5819W
Taiwan Semiconductor
Small Signal Product
1A, 20V - 40V Schottky Diodes
FEATURES
- Low Forward Voltage Drop
- Surface Mounted Device
- MSL: level 3
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
- Case: Bend lead SOD-123 package
- High temperature soldering guaranteed: 260°C/10s
- Weight: 10mg (approximately)
SOD-123
APPLICATION
Low voltage, high frequency inverters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
en
d
SYMBOL
V
RM
B5817W
20
20
20
20
14
V
RRM
V
R
V
R(RMS)
I
O
I
FSM
I
FRM
P
D
R
THJA
T
J
T
STG
SYMBOL
V
(BR)
MIN
20
30
40
-
I
R
-
-
-
-
V
F
-
-
-
-
C
D
-
V
RWM
Non-Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Currect
Peak Forward Surge Current @t=8.3ms
Repetitive Peak Forward Current
Power Dissipation
Junction Temperature
mm
PARAMETER
ed
VALUE
B5818W
30
30
30
30
21
1
9
1.5
500
250
125
- 55 to +125
MAX
-
-
-
1
0.450
0.750
0.550
0.875
0.600
0.900
120
mA
V
B5819W
40
40
40
40
28
UNIT
V
V
V
V
V
A
A
A
mW
°C/W
°C
°C
UNIT
Thermal Resistance form Junction to Ambient
Storage Temperature Range
PARAMETER
B5817W
Reverse Breakdown Voltage
B5818W
B5819W
Reverse Voltage Leakage
Current
B5817W
B5818W
B5819W
B5817W
Forward Voltage
B5818W
B5819W
Diode Capacitance
No
TEST CONDITION
at I
R
= 1 mA
at V
R
= 20 V
at V
R
= 30 V
at V
R
= 40 V
at I
F
= 1A
at I
F
= 3A
at I
F
= 1A
at I
F
= 3A
at I
F
= 1A
at I
F
= 3A
V
R
=4V, f=1.0MHz
tR
eco
V
V
V
pF
Version: C1602

B5818W RHG Related Products

B5818W RHG B5817W RHG B5819W RHG
Description Schottky Diode and RectifierSchottky 30v 500mW Schottky Diode and RectifierSchottky 20v 500mW Schottky Diodes and Rectifiers Schottky 40v 500mW
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
Product Category Schottky diodes and rectifiers Schottky diodes and rectifiers Schottky diodes and rectifiers
product Rectifiers Rectifiers Rectifiers
Factory packaging quantity 3000 3000 3000
Encapsulation Reel Reel Reel

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