RM4Z datasheet, PDF - EEWORLD Datasheet

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RM4Z: Description1.7 A, 200 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size19KB，1 Pages; ManufacturerSANKEN; Websitehttp://www.sanken-ele.co.jp/en/; Environmental Compliance

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RM4Z Overview

1.7 A, 200 V, SILICON, RECTIFIER DIODE

RM4Z Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SANKEN
Parts packaging code	AXIAL DIODE
package instruction	O-PALF-W2
Contacts	2
Reach Compliance Code	unknow
ECCN code	EAR99
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	200 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	1.7 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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Rectifier Diodes

Absolute Maximum Ratings

Parameter

Type No.

(V)

F (AV)

(A)

( ) is with

Heatsink

Electrical Characteristics (Ta = 25°C)

Tstg

(°C)

max

(V)

(A)

(µA)

= V

max

(H)

(µA)

= V

Ta = 100°C max

Rth (j- )

(°C/ W)

Others

Mass

Fig.

(g)

FSM

(A)

50Hz

Half-cycle Sinewave

Single Shot

(°C)

RM 3

RM 3A

RM 3B

RM 3C

RM 4Y

RM 4Z

RM 4

RM 4A

RM 4B

RM 4C

RM 4AM

400

600

800

1000

100

200

400

600

800

1000

600

2.5

2.0

150

0.95

2.5

100

(150°C)

1.0

200

1.7

(3.0)

150

1.8

(3.2)

350

–40 to +150

0.95

3.0

0.97

0.92

3.5

1.2

RM 3 series

2.5

F (AV)

(A)

Ta—I

F (AV)

Derating

L = 20 mm

---I

Characteristics

(Typical)

FSM

(A)

150

FMS

Rating

FSM

(A)

2.0

RM3C

1.5

Peak Forward Surge Current

P. C. B. 1.6 t

Solder Land

5.5

Forward Current I

(A)

20ms

100

Average Forward Current

0.1

100ºC

25ºC

1.0

0.01

0.5

100 125

Ambient Temperature Ta (ºC)

150

0.001

0.3

0.5

0.7

0.9

Forward Voltage V

(V)

1.1

Overcurrent Cycles

RM 4 series

Ta—I

F (AV)

Derating

3.75

F (AV)

(A)

---I

Characteristics

(Typical)

100

FSM

(A)

200

FMS

Rating

00ºC

Ta =

25ºC

5 mm

Forward Current I

(A)

3.00

160

Peak Forward Surge Current

Average Forward Current

Ta =1

•2

0•

2.25

tho

120

RM 4Y

RM 4Z

RM 4

RM 4A

ats

ink

1.50

tsi

sid

0.75

RM4B

RM4C

100 125

Ambient Temperature Ta (ºC)

150

0.1

1.0

2.0

Forward Voltage V

(V)

Overcurrent Cycles

RM 4M series

Ta—I

F (AV)

Derating

3.5

F (AV)

(A)

---I

Characteristics

(Typical)

100

FSM

(A)

350

300

FMS

Rating

FSM

(A)

•2

5 mm

Forward Current I

(A)

2.8

20ms

2.1

ith

Peak Forward Surge Current

1.2

0•

Average Forward Current

sin

200

1.4

0.1

= 150ºC

100ºC

25ºC

0.2

0.4

0.6

0.8

1.0

Forward Voltage V

(V)

ide

tsi

100

0.7

0.01

0.001

100 125

Ambient Temperature Ta (ºC)

150

Overcurrent Cycles

External Dimensions

(Unit: mm)

Flammability:

UL94V-0 or Equivalent

Fig.

1.2

±0.05

Cathode Mark

Fig.

1.4

±0.1

Cathode Mark

50.0

±0.1

5.2

±0.2

62.5

±0.7

8.0

±0.2

9.1

±0.2

6.5

±0.2

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