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RM4AM

Description
3.2 A, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size19KB,1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Environmental Compliance
Download Datasheet Parametric View All

RM4AM Overview

3.2 A, SILICON, RECTIFIER DIODE

RM4AM Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSANKEN
Parts packaging codeAXIAL DIODE
package instructionO-PALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.92 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current350 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current3.2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Rectifier Diodes
Absolute Maximum Ratings
Parameter
Type No.
V
RM
(V)
I
F (AV)
(A)
( ) is with
Heatsink
Electrical Characteristics (Ta = 25°C)
Tstg
(°C)
max
V
F
(V)
I
F
(A)
I
R
(µA)
V
R
= V
RM
max
I
R
(H)
(µA)
V
R
= V
RM
Ta = 100°C max
Rth (j- )
(°C/ W)
Others
Mass
Fig.
(g)
I
FSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Tj
(°C)
RM 3
RM 3A
RM 3B
RM 3C
RM 4Y
RM 4Z
RM 4
RM 4A
RM 4B
RM 4C
RM 4AM
400
600
800
1000
100
200
400
600
800
1000
600
2.5
2.0
150
0.95
2.5
10
100
(150°C)
10
1.0
A
200
1.7
(3.0)
150
1.8
(3.2)
350
–40 to +150
0.95
3.0
0.97
0.92
3.5
10
50
8
1.2
10
50
8
1.2
B
RM 3 series
2.5
I
F (AV)
(A)
Ta—I
F (AV)
Derating
L = 20 mm
L = 20 mm
V
F
---I
F
Characteristics
(Typical)
10
I
FSM
(A)
150
I
FMS
Rating
I
FSM
(A)
2.0
RM3C
1.5
Peak Forward Surge Current
P. C. B. 1.6 t
Solder Land
5.5
Forward Current I
F
(A)
20ms
1
100
Average Forward Current
0.1
Ta
=
100ºC
25ºC
1.0
50
0.01
0.5
0
0
25
50
75
100 125
Ambient Temperature Ta (ºC)
150
0.001
0.3
0.5
0.7
0.9
Forward Voltage V
F
(V)
1.1
0
1
5
10
Overcurrent Cycles
50
RM 4 series
Ta—I
F (AV)
Derating
3.75
I
F (AV)
(A)
V
F
---I
F
Characteristics
(Typical)
100
I
FSM
(A)
200
I
FMS
Rating
00ºC
Ta =
25ºC
5 mm
5 mm
Forward Current I
F
(A)
3.00
160
10
Peak Forward Surge Current
Average Forward Current
Ta =1
20
•2
0•
1t
2.25
Wi
tho
120
RM 4Y
RM 4Z
RM 4
RM 4A
Cu
He
ats
ink
1.50
ut
H
80
on
ea
tsi
1
bo
th
sid
nk
0.75
40
RM4B
RM4C
es
0
0
25
50
75
100 125
Ambient Temperature Ta (ºC)
150
0.1
0
1.0
2.0
Forward Voltage V
F
(V)
0
1
5
10
Overcurrent Cycles
50
RM 4M series
Ta—I
F (AV)
Derating
3.5
I
F (AV)
(A)
V
F
---I
F
Characteristics
(Typical)
100
I
FSM
(A)
350
300
I
FMS
Rating
I
FSM
(A)
20
•2
5 mm
5 mm
Forward Current I
F
(A)
2.8
10
20ms
2.1
W
ith
ou
tH
1
Peak Forward Surge Current
1.2
0•
1t
Cu
Average Forward Current
He
at
sin
ko
200
1.4
ea
0.1
T
a
= 150ºC
100ºC
25ºC
0
0.2
0.4
0.6
0.8
1.0
Forward Voltage V
F
(V)
ot
nb
hs
ide
tsi
nk
100
0.7
0.01
s
0
0.001
0
25
50
75
100 125
Ambient Temperature Ta (ºC)
150
0
1
5
10
Overcurrent Cycles
50
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
Fig.
A
1.2
±0.05
Cathode Mark
Fig.
B
1.4
±0.1
Cathode Mark
50.0
±0.1
5.2
±0.2
62.5
±0.7
8.0
±0.2
9.1
±0.2
6.5
±0.2
16
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