BZT52C2V4 - BZT52C75
Taiwan Semiconductor
500mW, 5% Tolerance SMD Zener Diodes
FEATURES
●
●
●
●
●
Wide zener voltage range selection: 2.4V to 75V
V
Z
tolerance selection of ± 5%
Surface mounting device (SMD) type
Moisture sensitivity level: level 1, per J-STD-020
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
Test current I
ZT
P
D
V
F
at I
F
=10mA
T
J
Max.
Package
Configuration
VALUE
2.4-75
5
500
1
150
UNIT
V
mA
mW
V
°C
SOD-123F
Single die
APPLICATIONS
● Low voltage stabilizers or voltage references
● Adapters
● On-board DC/DC converter
MECHANICAL DATA
●
●
●
●
●
Case: SOD-123F
Molding compound meets UL 94 V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Polarity: Indicated by cathode band
Weight: 8.85 ± 0.5mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage @ I
F
=10mA
Power dissipation
Junction temperature range
Storage temperature range
SYMBOL
V
F
P
D
T
J
T
STG
VALUE
1
500
-65 to +150
-65 to +150
UNIT
V
mW
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
TYP
350
UNIT
°C/W
1
Version: G1804
BZT52C2V4 - BZT52C75
Taiwan Semiconductor
Notes:
1. The zener voltage (V
Z
) is tested under pulse condition of 30ms.
2. The device numbers listed have a standard tolerance on the normal zener voltage of ±5%.
3. For detailed information on price, availability and delivery of normal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current
having a rms value equal to 10% of the DC zener current(I
ZT
or I
ZK
) is superimposed to I
ZT
or I
ZK
.
ORDERING INFORMATION
PART NO.
(Note 1)
BZT52Cxxx RHG
BZT52Cxxx RH
PACKAGE
SOD-123F
SOD-123F
PACKING
3K / 7" Reel
3K / 7" Reel
Note:
1. "xxx" defines voltage from 2.4V (BZT52C2V4) to 75V (BZT52C75)
3
Version: G1804
BZT52C2V4 - BZT52C75
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Typical Forward Characteristics
1000
100
Fig. 2 Zener Breakdown Characteristics
Forward Current (mA)
100
Zener Current (mA)
T
A
=25
o
C
10
T
A
=25
o
C
1
10
0.1
1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.01
0
1
2
3
4
5
6
7
8
9
10 11 12
Forward Voltage (V)
Zener Voltage (V)
Fig. 3 Zener Breakdown Characteristics
100
700
600
Zener Current (mA)
10
Power Dissipation (mW)
500
400
300
200
100
0.01
15
25
35
45
55
65
75
85
0
0
Fig.4 Power Dissipation Curve
1
0.1
50
100
150
200
Zener Voltage (V)
Ambient Temperature (
o
C)
4
Version: G1804
BZT52C2V4 - BZT52C75
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Typical Capacitance
1000
Fig.6 Effect of Zener Voltage on Impedence
1000
I
Z
=1mA
Capacitance (pF)
1V Bias
100
Dynamic Impedence(Ohm)
I
Z
=5mA
100
10
Bias at 50% of
V
Z
(Nom)
10
I
Z
=20mA
1
1
10
Zener Voltage (V)
100
1
1
10
Zener Voltage (V)
100
5
Version: G1804
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