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BZX84C30 RF

Description
Zener diode 30v, 350mW
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    Zener diode   
File Size246KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BZX84C30 RF Overview

Zener diode 30v, 350mW

BZX84C30 RF Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Product CategoryZener diode
Vz - Zener voltage30 V
Installation styleSMD/SMT
Package/boxSOT-23-3
Pd-power dissipation300 mW
voltage tolerance5 %
voltage temperature coefficient29.4 mV/C
Zener current0.1 uA
Zz - Zener impedance80 Ohms
Minimum operating temperature- 65 C
Maximum operating temperature+ 150 C
ConfigurationSingle
Test current2 mA
EncapsulationCut Tape
EncapsulationReel
seriesBZX84C
high1.3 mm
length3.1 mm
width1.5 mm
Factory packaging quantity3000
Vf - forward voltage900 mV
unit weight8 mg
BZX84C2V4- BZX84C39
Taiwan Semiconductor
Small Signal Product
Surface Mount Zener Diode
FEATURES
- Zener voltages from : 2.4V - 39V
- Planar die construction
- Ideally suited for automated assembly processes
- Moisture sensitivity : Level 1 per J-STD-020
MECHANICAL DATA
- Case : SOT-23, molding plastic
- Case material - UL flammibility rating 94V-0
- Polarity : See diagram
- Lead free plating
- Marking : Marking code
- Weight : 0.008 g (approximately)
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Forward Voltage
I
F
= 10 mA
(Note 1)
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
SYMBOL
P
D
V
F
R
θJA
T
J
, T
STG
VALUE
300
0.9
417
- 65 to +150
o
UNIT
mW
V
C/W
o
C
Note 1: Valid provided that device terminals are kept at ambient temerature .
Version: E1604
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