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RJH1CV6DPQ-E0#T2

Description
IGBT transistor IGBT
Categorysemiconductor    Discrete semiconductor    The transistor    IGBT transistor   
File Size236KB,11 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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RJH1CV6DPQ-E0#T2 Overview

IGBT transistor IGBT

RJH1CV6DPQ-E0#T2 Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Product CategoryIGBT transistor
technologySi
EncapsulationTube
Factory packaging quantity1
Preliminary
Datasheet
RJH1CV6DPQ-E0
1200V - 30A - IGBT
Application: Inverter
Features
Short circuit withstand time (5
μs
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.8 V typ. (at I
C
= 30 A, V
GE
= 15 V, Ta = 25°C)
Built-in fast recovery diode (t
rr
= 180 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 120 ns typ. (at V
CC
= 600 V, V
GE
= 15 V, I
C
= 30 A, Rg = 5
Ω,
Ta = 25°C, inductive load)
R07DS0524EJ0800
Rev.8.00
Nov 05, 2014
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
10
μs,
duty cycle
1%
2. Value at Tc = 25°C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
Note1
I
DF
i
DF
(peak)
Note1
P
C Note2
θj-c
Note2
θj-cd
Note2
Tj
Tstg
Ratings
1200
±30
60
30
90
30
90
290
0.43
0.69
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0524EJ0800 Rev.8.00
Nov 05, 2014
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