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BSL806N L6327

Description
MOSFET N-Ch 20V 2.3A TSOP-6
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size338KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSL806N L6327 Overview

MOSFET N-Ch 20V 2.3A TSOP-6

BSL806N L6327 Parametric

Parameter NameAttribute value
MakerInfineon
Product CategoryMOSFET
technologySi
Installation styleSMD/SMT
Package/boxTSOP-6
Number of channels2 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage20 V
Id-continuous drain current2.3 A
Rds On - drain-source on-resistance57 mOhms
Vgs - gate-source voltage8 V
Qg-gate charge1.7 nC
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
Pd-power dissipation500 mW (1/2 W)
ConfigurationDual
EncapsulationCut Tape
EncapsulationReel
high1.1 mm
length3 mm
seriesBSL806
Transistor type2 N-Channel
width1.5 mm
Fall time3.7 nS
Rise Time9.9 nS
Factory packaging quantity3000
Typical shutdown delay time12 nS
unit weight20 mg
BSL806N
OptiMOS
2 Small-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Ultra Logic level (1.8V rated)
• Avalanche rated
• Qualified according to AEC Q101
•100% lead-free; RoHS compliant
•Halogen free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=2.5 V
V
GS
=1.8 V
I
D
20
57
82
2.3
A
V
mW
PG-TSOP6
6
5
4
1
2
3
Type
BSL806N
Package
PG-TSOP6
Tape and Reel Information
H6327: 3000 pcs/ reel
Marking
sPO
Lead Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
(1)
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=2.3 A,
R
GS
=25
W
I
D
=2.3 A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
2.3
1.9
9.3
10.8
mJ
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±8
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
V
W
°C
Remark: one of both transistors active
page 1
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