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1SS133M A0G

Description
Diode - General Purpose, Power, Switching diode 300mW
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    Diode - general, power switch   
File Size216KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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1SS133M A0G Overview

Diode - General Purpose, Power, Switching diode 300mW

1SS133M A0G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Product CategoryDiodes - General Purpose, Power, Switching
productSwitching Diodes
EncapsulationReel
Factory packaging quantity10000
1SS133M
Taiwan Semiconductor
Small Signal Product
300mW, Hermetically Sealed Glass Switching Diodes
FEATURES
- Fast switching device (t
rr
< 4.0 ns)
- Through-hole mount device type
- DO-34 package (JEDEC DO-204)
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion resistant
and leads are readily solderable
- RoHS compliant
- Solder hot dip Tin (Sn) lead finish
- Cathode indicated by polarity band
- Marking code: 133
DO-34
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Power Dissipation
Working Inverse Voltage
Average Rectified Current
Non-Repetitive Peak Forward Current
Peak Forward Surge Current
Operating Junction Temperature
Storage Temperature Range
SYMBOL
P
D
W
IV
I
O
I
FM
I
FSURGE
T
J
T
STG
VALUE
300
90
150
450
2
+ 175
-65 to +200
UNIT
mW
V
mA
mA
A
o
o
C
C
PARAMETER
Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
I
R
=500nA
I
F
=100mA
V
R
=80V
V
R
=0, f=1.0MHz
(Note 1)
SYMBOL
B
V
V
F
I
R
C
j
t
rr
MIN
80
MAX
--
1.2
500
UNIT
V
V
nA
pF
ns
--
--
4.0
4.0
Notes: 1. Reverse Recovery Test Conditions: I
F
=I
R
=10mA, R
L
=100Ω, I
RR
=1mA
Document Number: DS_S1403003
Version: C15
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