Rev
2.0
BSL211SP
OptiMOS
-P Small-Signal-Transistor
Feature
•
P-Channel
•
Enhancement mode
•
Super Logic Level (2.5 V rated)
•
150°C operating temperature
•
Avalanche rated
•
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
-20
67
-4.7
P-TSOP6-6
V
mΩ
A
4
5
6
•
Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen free according to IEC61249221
3
2
1
Type
Package
Tape and reel
Marking
Gate
pin 3
Drain
pin 1,2,
5,6
Source
pin 4
BSL211SP
P-TSOP6-6
H6327:
3000pcs/r.
sPB
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
A
-4.7
-3.8
Pulsed drain current
T
A
=25°C
I
D puls
-18.8
Avalanche energy, single pulse
I
D
=-4.7 A ,
V
DD
=-10V,
R
GS
=25Ω
E
AS
26
mJ
Reverse diode dv/dt
I
S
=-4.7A,
V
DS
=-16V, di/dt=200A/µs,
T
jmax
=150°C
dv/dt
-6
kV/µs
Gate source voltage
V
GS
±12
V
Power dissipation
T
A
=25°C
P
tot
2
W
Operating and storage temperature
T
j
,
T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
ESD Class
55/150/56
Class 0
JESD22-A114-HBM
Page 1
2014-01-09
Rev
2.0
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
BSL211SP
Symbol
min.
R
thJS
R
thJA
-
-
-
Values
typ.
-
-
-
max.
50
230
62.5
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=-250µA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
-20
-0.6
Values
typ.
-
-0.9
max.
-
-1.2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=-25µA
Zero gate voltage drain current
V
DS
=-20V,
V
GS
=0,
T
j
=25°C
V
DS
=-20V,
V
GS
=0,
T
j
=150°C
µA
-0.1
-10
-10
94
54
-1
-100
-100
110
67
nA
mΩ
Gate-source leakage current
V
GS
=-12V,
V
DS
=0
Drain-source on-state resistance
V
GS
=-2.5V,
I
D
=-3.7A
Drain-source on-state resistance
V
GS
=-4.5,
I
D
=-4.7A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t
≤
5 sec.
Page 2
2014-01-09
Rev
2.0
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-10V,
V
GS
=-4.5V,
I
D
=-1A,
R
G
=6Ω
çV
DS
ç≥2*çI
D
ç*R
DS(on)max
I
D
=-3.8A
V
GS
=0,
V
DS
=-15V,
f=1MHz
BSL211SP
Symbol
Conditions
min.
6.2
-
-
-
-
-
-
-
Values
typ.
12.4
654
241
197
8.7
13.9
25
23.3
max.
-
-
-
-
13
21
37.3
35
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0, |I
F
| = |I
D
|
V
R
=-10V, |I
F
|
=
|l
D
|,
di
F
/dt=100A/µs
Q
gs
Q
gd
Q
g
V
DD
=-10V,
I
D
=-4.7A
-
-
-
-
-1.3
-4.7
-8.3
-2
-2
-7
-12.4
-
nC
V
DD
=-10V,
I
D
=-4.7A,
V
GS
=0 to -4.5V
V
(plateau)
V
DD
=-10V,
I
D
=-4.7A
V
I
S
I
SM
T
A
=25°C
-
-
-
-
-
-
-
-0.94
20.6
6.3
-2
-18.8
-1.4
25.8
7.9
A
V
ns
nC
Page 3
2014-01-09
Rev
2.0
1 Power dissipation
P
tot
=
f
(T
A
)
2.2
BSL211SP
BSL211SP
2 Drain current
I
D
=
f
(T
A
)
parameter: |V
GS
|≥ 4.5 V
-5.5
BSL211SP
W
1.8
1.6
A
-4.5
-4
P
tot
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
I
D
°C
160
1.4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
0
20
40
60
80
100
120
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
-10
2
BSL211SP
4 Transient thermal impedance
Z
thJS
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
2
BSL211SP
K/W
A
/
I
D
=
R
D
S(
)
on
V
D
S
t
p = 41.0µs
10
1
-10
1
100 µs
Z
thJS
1 ms
10
0
I
D
-10
0
10 ms
10
-1
D = 0.50
0.20
10
-2
0.10
0.05
single pulse
10
-3
-10
-1
DC
0.02
0.01
-10
-2 -1
-10
-10
0
-10
1
V
-10
2
10
-4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
Page 4
t
p
2014-01-09
Rev
2.0
5 Typ. output characteristic
I
D
=
f
(V
DS
);
T
j
=25°C
parameter:
t
p
= 80 µs
30
Vgs = -3.5V
BSL211SP
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
0.2
A
Ω
Vgs = -2.3V
Vgs = -2.5V
Vgs = -3V
Vgs = -3.5V
-
I
D
20
Vgs = -3V
R
DS(on)
Vgs = -4V
Vgs = -4.5V
Vgs = -5.5V
Vgs = -7V
0.15
0.125
Vgs = - 4V
Vgs = - 4.5V
Vgs= - 5.5V
Vgs = - 7V
15
0.1
10
Vgs = -2.5V
0.075
0.05
Vgs = -2.3V
5
Vgs = -2V
0.025
0
0
1
2
3
4
5
6
7
8
V
10
0
0
5
10
15
20
A
30
-
V
DS
-
I
D
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
); |V
DS
|≥ 2 x|I
D
| x
R
DS(on)max
parameter:
t
p
= 80 µs
32
A
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25°C
parameter:
t
p = 80 µs
24
S
24
18
-
I
D
20
g
fs
V
15
16
12
12
9
8
6
4
3
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.6
0
0
4
8
12
16
20
24
A
32
-
V
GS
-
I
D
Page 5
2014-01-09
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