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BSP298 H6327

Description
MOSFET N-Ch 400V 500mA SOT-223-3
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size422KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSP298 H6327 Overview

MOSFET N-Ch 400V 500mA SOT-223-3

BSP298 H6327 Parametric

Parameter NameAttribute value
MakerInfineon
Product CategoryMOSFET
technologySi
Installation styleSMD/SMT
Package/boxSOT-223-4
Number of channels1 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage400 V
Id-continuous drain current500 mA
Rds On - drain-source on-resistance2.2 Ohms
Vgs th-gate-source threshold voltage2.1 V
Vgs - gate-source voltage20 V
Qg-gate charge-
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
Pd-power dissipation1.8 W
ConfigurationSingle
channel modeEnhancement
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
high1.6 mm
length6.5 mm
seriesBSP298
Transistor type1 N-Channel
width3.5 mm
Forward transconductance - minimum500 mS
Fall time20 ns
Rise Time25 ns
Factory packaging quantity1000
Typical shutdown delay time30 ns
Typical switch-on delay time10 ns
unit weight112 mg
BSP298
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
V
GS(th)
= 2.1 ... 4.0 V
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen­free according to IEC61249­2­21
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
Type
V
DS
400 V
Pb-free
Yes
I
D
0.5 A
R
DS(on)
3
Package
Marking
BSP298
Type
BSP298
PG-SOT223
BSP298
Tape and Reel Information
Packaging
H6327
Dry
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
A
= 26 °C
I
D
A
0.5
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
2
E
AS
Avalanche energy, single pulse
I
D
= 1.35 A,
V
DD
= 50 V,
R
GS
= 25
L
= 125 mH,
T
j
= 25 °C
mJ
130
V
GS
P
tot
Gate source voltage
Power dissipation
T
A
= 25 °C
±
20
1.8
V
W
ESD Class
JESD22-A114-HBM
Class 1b
Rev. 2.6
1
2012-11-29
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