.................................................................................................................................... -0.6V to V
CC
+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias .................................................................................................................-40°C to 85°C
ESD protection on all pins ..........................................................................................................................................4 kV
†
NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Electrical Characteristics:
Industrial (I):
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 2.5V
Min.
0.7*V
CC
-0.3
-0.3
0.05*Vcc
V
CC
-0.5
V
CC
-0.5
—
—
—
—
—
—
Max.
V
CC
+1
0.3*V
CC
0.2*V
CC
—
—
—
0.4
0.4
±4
±3
±1
7
Units
V
V
V
V
V
V
V
V
mA
mA
A
pF
V
CC
2.5V
V
CC
< 2.5V
V
CC
2.5V
(Note
1)
I
OH
= -300
A,
V
CC
= 5.5V
I
OH
= -200
A,
Vcc = 2.5V
I
O
I = 300
A,
V
CC
= 5.5V
I
O
I = 200
A,
Vcc = 2.5V
V
CC
= 5.5V
(Note
1)
Vcc = 2.5V
(Note
1)
V
IN
= V
SS
or V
CC
T
A
= 25°C, F
CLK
= 1 MHz,
V
CC
= 5.0V
(Note
1)
V
CC
=5.5V, F
BUS
=100 kHz, C
B
=100 pF
V
CC
=2.5V, F
BUS
=100 kHz, C
B
=100 pF
V
CC
= 5.5V
V
CC
= 2.5V
V
CC
= 5.5V, T
A
= 85°C
V
CC
= 5.5V
T
A
= -40°C to +85°C
T
A
= -20°C to +85°C
Test Conditions
DC CHARACTERISTICS
Param.
No.
D1
D2
D3
D4
D5
D6
D7
D8
Sym.
V
IH
V
IL
V
HYS
V
OH
V
OL
I
O
I
LI
C
INT
Characteristic
High-level Input
Voltage
Low-level Input
Voltage
Hysteresis of Schmitt
Trigger inputs (SCIO)
High-level Output
Voltage
Low-level Output
Voltage
Output Current Limit
(Note
2)
Input Leakage
Current (SCIO)
Internal Capacitance
(all inputs and
outputs)
D9
D10
D11
D12
Note 1:
2:
I
CC
Read Read Operating
Current
I
CC
Write Write Operating
Current
Iccs
I
CCI
Standby Current
Idle Mode Current
—
—
—
—
—
—
3
1
5
3
1
50
mA
mA
mA
mA
A
A
This parameter is periodically sampled and not 100% tested.
The SCIO output driver impedance will vary to ensure I
O
is not exceeded.
DS20005206A-page 2
2013 Microchip Technology Inc.
11AA02UID
TABLE 1-2:
AC CHARACTERISTICS
Electrical Characteristics:
Industrial (I):
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 2.5V
Min.
10
10
—
—
—
—
—
—
600
10
5
—
—
—
1M
Max.
100
100
±0.06
±0.50
±5
±0.25
100
100
—
—
—
50
5
10
—
Units
kHz
µs
UI
—
—
(Note
3)
T
A
= -40°C to +85°C
T
A
= -20°C to +85°C
Test Conditions
AC CHARACTERISTICS
Param.
No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Sym.
F
BUS
T
E
T
IJIT
Characteristic
Serial Bus Frequency
Bit Period
Input Edge Jitter
Tolerance
F
DRIFT
Serial Bus Frequency
Drift Rate Tolerance
F
DEV
T
OJIT
T
R
T
F
Serial Bus Frequency
Drift Limit
Output Edge Jitter
SCIO Input Rise Time
(Note
1)
SCIO Input Fall Time
(Note
1)
Start Header Setup Time
Start Header Low Pulse
Time
Input Filter Spike
Suppression (SCIO)
Write Cycle Time
(byte or page)
Endurance (per page)
% per byte —
% per
command
UI
ns
ns
µs
µs
µs
ns
ms
ms
cycles
—
(Note
3)
—
—
—
—
—
(Note
1)
Write, WRSR commands
ERAL, SETAL commands
25°C, V
CC
= 5.5V
(Note
2)
T
STBY
Standby Pulse Time
T
SS
T
HDR
T
SP
T
WC
—
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance
™
Model which can be obtained on Microchip’s web site at
www.microchip.com.
3:
A Unit Interval (UI) is equal to 1-bit period (T
E
) at the current bus frequency.
TABLE 1-3:
AC Waveform:
V
LO
= 0.2V
AC TEST CONDITIONS
V
HI
= V
CC
- 0.2V
C
L
= 100 pF
Timing Measurement Reference Level
Input
Output
0.5 V
CC
0.5 V
CC
2013 Microchip Technology Inc.
DS20005206A-page 3
11AA02UID
FIGURE 1-1:
10
BUS TIMING – START HEADER
11
2
SCIO
Data ‘0’
Data ‘1’
Data ‘0’
Data ‘1’
Data ‘0’
Data ‘1’
Data ‘0’
Data ‘1’ MAK bit NoSAK bit
FIGURE 1-2:
BUS TIMING – DATA
2
7
12
8
SCIO
Data ‘0’
Data ‘1’
Data ‘1’
Data ‘0’
FIGURE 1-3:
BUS TIMING – STANDBY PULSE
9
SCIO
Standby
Mode
FIGURE 1-4:
BUS TIMING – JITTER
2
3
2
3
6
6
6
6
Ideal Edge
from Master
Ideal Edge
from Master
Ideal Edge
from Slave
Ideal Edge
from Slave
DS20005206A-page 4
2013 Microchip Technology Inc.
11AA02UID
2.0
2.1
FUNCTIONAL DESCRIPTION
Principles of Operation
The 11AA02UID family of serial EEPROMs support
the UNI/O
®
protocol. They can be interfaced with
microcontrollers, including Microchip’s PIC
®
microcon-
trollers, ASICs, or any other device with an available
discrete I/O line that can be configured properly to
match the UNI/O protocol.
The 11AA02UID devices contain an 8-bit instruction
register. The devices are accessed via the SCIO pin.
Data is embedded into the I/O stream through
Manchester encoding. The bus is controlled by a
master device which determines the clock period, con-
trols the bus access and initiates all operations, while
the 11AA02UID works as slave. Both master and slave
can operate as transmitter or receiver, but the master
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