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BYG23M E3

Description
Rectifier 1A 1000V
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    rectifier   
File Size375KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BYG23M E3 Overview

Rectifier 1A 1000V

BYG23M E3 Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Product CategoryRectifier
Installation styleSMD/SMT
Package/boxDO-214AC-2
Vr - 反向电压 1000 V
If - forward current1.5 A
typeFast Recovery Rectifiers
ConfigurationSingle
Vf - forward voltage1.7 V
Maximum surge current50 A
Ir - 反向电流 1 uA
Recovery Time65 ns
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
productRectifiers
Factory packaging quantity1800
unit weight64 mg
BYG23M
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction chip.
- Ideal for automated placement
- Fast switching for high efficiency
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
- AEC-Q101 available
High Efficient Surface Mount Rectifiers
TYPICAL APPLICATION
The superior avalanche capability of BYG23M is specially
suited for free-wheeling, clamping, snubbering,
demagnetization in power supplies and other power switching applications.
DO-214AC (SMA)
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.064 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (@T
A
=65°C)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
T
J
=25°C
T
J
=100°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
BYG23M
1000
700
1000
1.5
50
1.7
1
I
R
15
50
E
RSM
t
rr
C
J
R
θJA
T
J
T
STG
30
65
15
70
- 55 to +150
- 55 to +150
O
UNIT
V
V
V
A
A
V
μA
Pulse energy in avalanche mode, non repetitive
(Inductive load switch off ) T
A
=25℃, I
(BR)R
=1.23A
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0Volts.
mJ
ns
pF
C/W
O
O
C
C
Document Number: DS_D1411087
Version: B14

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Description Rectifier 1A 1000V Rectifier 1 AMP, 1000V High Efficient
Maker Taiwan Semiconductor Taiwan Semiconductor
Product Category Rectifier Rectifier
product Rectifiers Rectifiers
Factory packaging quantity 1800 1800
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