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1N5401

Description
3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size46KB,2 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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1N5401 Overview

3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5401 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionO-PALF-W2
Reach Compliance Codeunknown
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature170 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse current500 µA
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 1N5400/D
Axial-Lead
Standard Recovery Rectifiers
Lead mounted standard recovery rectifiers are designed for use in power supplies
and other applications having need of a device with the following features:
High Current to Small Size
High Surge Current Capability
Low Forward Voltage Drop
Void–Free Economical Plastic Package
Available in Volume Quantities
1N5400
thru
1N5408
1N5404 and 1N5406 are
Motorola Preferred Devices
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 1.1 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16″ from case
Shipped in plastic bags, 5,000 per bag.
Available Tape and Reeled, 1500 per reel, by adding a “RL” suffix to the
part number
Polarity: Cathode Indicated by Polarity Band
Marking: 1N5400, 1N5401, 1N5402, 1N5404, 1N5406, 1N5407, 1N5408
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non–repetitive Peak Reverse Voltage
Average Rectified Forward Current
(Single Phase Resistive Load,
1/2″ Leads, TL = 105°C)
Non–repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions)
Operating and Storage Junction
Temperature Range
Symbol
VRRM
VRWM
VR
VRSM
IO
1N5400
50
1N5401
100
1N5402
200
1N5404
400
STANDARD
RECOVERY RECTIFIERS
50–1000 VOLTS
3.0 AMPERE
CASE 267–03
1N5406
600
1N5407
800
1N5408
1000
Unit
Volts
100
200
300
525
3.0
800
1000
1200
Volts
Amp
IFSM
TJ
Tstg
200 (one cycle)
– 65 to +170
– 65 to +175
Amp
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (PC Board Mount, 1/2″ Leads)
Symbol
R
θJA
Typ
53
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
*Instantaneous Forward Voltage (1)
(iF = 9.4 Amp)
Average Reverse Current (1)
DC Reverse Current (Rated dc Voltage, TL = 80°C)
Symbol
vF
IR(AV)
IR
Min
Typ
Max
1.2
500
500
Unit
Volts
µA
* JEDEC Registered Data.
(1) Measured in a single phase halfwave circuit such as shown in Figure 6.25 of EIA RS–282, November 1963. Operated at rated load conditions
TL = 80°C, IO = 3.0 A, Vr = VRWM.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Ratings at 25°C ambient temperature unless otherwise specified.
60 Hz resistive or inductive loads.
For capacitive load, derate current by 20%.
Rev 2
©
Rectifier
Inc. 1996
Data
Motorola,
Device
1

1N5401 Related Products

1N5401 1N5400 1N5402 1N5404 1N5406 1N5407 1N5408
Description 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE,1KV V(RRM),DO-204AE
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
package instruction O-PALF-W2 PLASTIC, CASE 267-03, 2 PIN PLASTIC, CASE 267-03, 2 PIN PLASTIC, CASE 267-03, 2 PIN PLASTIC, CASE 267-03, 2 PIN PLASTIC, CASE 267-03, 2 PIN PLASTIC, CASE 267-03, 2 PIN
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A 200 A 200 A 200 A
Number of components 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 170 °C 170 °C 170 °C 170 °C 170 °C 170 °C 170 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 100 V 50 V 200 V 400 V 600 V 800 V 1000 V
Maximum reverse current 500 µA 500 µA 500 µA 500 µA 500 µA 500 µA 500 µA
surface mount NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
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