EVALUATION KIT AVAILABLE
MAX14930–MAX14932,
MAX14130–MAX14131
General Description
The MAX14930–MAX14932 are a family of 4-channel,
2.75kV
RMS
and 3.75kV
RMS
digital isolators utilizing
Maxim’s proprietary process technology. The MAX14130–
MAX14131 are 4-channel 1kV
RMS
digital isolators in
smaller footprint QSOP packages. For applications
requiring 5kV
RMS
of isolation, see the MAX14934–
MAX14936. The MAX14930–MAX14932 family transfers
digital signals between circuits with different power
domains at ambient temperatures up to +125°C.
The MAX14930–MAX14932 family offers all three possible
unidirectional channel configurations to accommodate
any 4-channel design; including SPI, RS-232, RS-485,
and digital I/O applications. For applications requiring
bidirectional channels, such as I
2
C, see the MAX14933.
Devices are available with data rates from DC up to
1Mbps, 25Mbps, or 150Mbps. Each device is also avail-
able in either a default high or default low configuration.
The default is the state an output goes to when its input
is unpowered. See the
Ordering Information and Selector
Guide
for the suffixes associated with each option.
Independent 1.71V to 5.5V supplies on each side of the
isolator also make the devices suitable for use as level
translators.
The MAX14930–MAX14932 are available in both a 16-pin
wide body (10.3mm x 7.5mm) and narrow body (9.9mm x
3.9mm) SOIC package. The MAX14130–MAX14131 are
available in a 16-pin (6mm x 5mm) QSOP package. All
devices are rated for operation at ambient temperatures
of -40°C to +125°C.
Ordering Information and Selector Guide
appears at end of
data sheet.
●
4-Channel, 1kV
RMS
, 2.75kV
RMS
,
and 3.75kV
RMS
Digital Isolators
Benefits and Features
Robust Galvanic Isolation of Digital Signals
•
Withstands up to 3.75kV
RMS
for 60s (VISO)
(MAX14930–MAX14932)
•
Continuously Withstands 443V
RMS
(V
IOWM
)
(MAX14930–MAX14932)
• 630VP Repetitive Peak Voltage (V
IORM
)
(MAX14930–MAX14932)
• Withstands ±10kV Surge per IEC 61000-4-5
Interfaces Directly with Most Micros and FPGAs
• Accepts 1.71V to 5.5V Supplies
Many Options Support Broad Applications
• 3 Data Rates (1Mbps, 25Mbps, 150Mbps)
•
3 Channel Direction Configuration
• 2 Output Default States (High or Low)
• 3 Packages (3.8mm, 4mm, 8mm Creepage and Clearance)
Low Power Consumption at High Data Rates
At 1.8V:
• 2.5mA per Channel Typical at 1Mbps
• 5.25mA per Channel Typical at 100Mbps
At 3.3V:
• 2.6mA per Channel Typical at 1Mbps
• 7.1mA per Channel Typical at 100Mbps
●
●
●
Safety Regulatory Approvals
(see
Safety Regulatory Approvals)
● UL According to UL1577
● cUL According to CSA Bulletin 5A
● VDE 0884-10
Applications
●
●
●
●
●
Fieldbus Communications for Industrial Automation
Isolated SPI, RS-232, RS-485/RS-422
General Multichannel Isolation Applications
Battery Management
Medical Systems
V
DDA
V
DDB
Functional Diagram
V
DDA
V
DDB
V
DDA
V
DDB
MAX14930/MAX14130
ENB
INA1
OUTB1
INA1
MAX14931/MAX14131
ENB
OUTB1
INA1
MAX14932
ENB
OUTB1
INA2
OUTB2
INA2
OUTB2
INA2
OUTB2
INA3
OUTB3
INA3
OUTB3
OUTA1
INB1
INA4
OUTB4
OUTA1
ENA
INB1
OUTA2
ENA
INB2
GNDA
GNDB
GNDA
GNDB
GNDA
GNDB
19-7066; Rev 8; 1/17
MAX14930–MAX14932,
MAX14130–MAX14131
Absolute Maximum Ratings
V
DDA
to GNDA, V
DDB
to GNDB .............................-0.3V to +6V
INA_, ENA to GNDA................................................-0.3V to +6V
INB_, ENB to GNDB ...............................................-0.3V to +6V
OUTA_ to GNDA
.................................... -0.3V to (V
DDA
+ 0.3V)
OUTB_ to GNDB
.................................... -0.3V to (V
DDB
+ 0.3V)
Short-Circuit Duration
(OUTA_ to GNDA, OUTB_ to GNDB)
..................Continuous
4-Channel, 1kV
RMS
, 2.75kV
RMS
,
and 3.75kV
RMS
Digital Isolators
Continuous Power Dissipation (T
A
= +70°C)
Wide SOIC (derate 14.1mW/°C above +70°C) ...... 1126.8mW
Narrow SOIC (derate 13.3mW/°C above +70°C) . .1066.7mW
QSOP (derate 9.6mW/°C above +70°C) ..................771.5mW
Operating Temperature Range ......................... -40°C to +125°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................. +300°C
Soldering Temperature (reflow) ......................................+260°C
Package Thermal Characteristics
(Note 1)
Wide SOIC
Junction-to-Ambient Thermal Resistance (θ
JA
) ..........71°C/W
Junction-to-Case Thermal Resistance (θ
JC
) ...............23°C/W
QSOP
Junction-to-Ambient Thermal Resistance (θ
JA
) .....103.7°C/W
Junction-to-Case Thermal Resistance (θ
JC
) ...............37°C/W
Narrow SOIC
Junction-to-Ambient Thermal Resistance (θ
JA
) ..........75°C/W
Junction-to-Case Thermal Resistance (θ
JC
) ...............24°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
DC Electrical Characteristics
PARAMETER
POWER SUPPLY
Operating Supply Voltage
Undervoltage Lockout Threshold
Undervoltage Lockout Threshold
Hysteresis
(V
DDA
- V
GNDA
= +1.71V to +5.5V, V
DDB
- V
GNDB
= +1.71V to +5.5V, C
L
= 15pF, T
A
= -40°C to +125°C, unless otherwise noted.
Typical values are at V
DDA
- V
GNDA
= +3.3V, V
DDB
- V
GNDB
= +3.3V, V
GNDA
= V
GNDB
, T
A
= +25°C, unless otherwise noted.) (Note 2)
SYMBOL
V
DDA
V
DDB
V
UVLO
_
V
UVLO
_
HYST
CONDITIONS
Relative to GNDA
Relative to GNDB
V
DD
_ rising
MIN
1.71
1.71
1.45
TYP
MAX
5.5
5.5
UNITS
V
V
V
mV
1.58
50
1.71
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