2. Rating applies when for both diode legs when mounted on 130 mm
2
pad size.
3. Rating applies for both diode legs when mounted on 1 in pad size.
Symbol
R
qJC
R
qJA
R
qJA
Value
3
92
57
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage Drop (Note 4)
(i
F
= 3 A, T
J
= 25°C)
(i
F
= 3 A, T
J
= 125°C)
(i
F
= 5 A, T
J
= 25°C)
(i
F
= 5 A, T
J
= 125°C)
Maximum Instantaneous Reverse Current (Note 4)
(T
J
= 25°C, Rated dc Voltage)
(T
J
= 125°C, Rated dc Voltage)
Maximum Reverse Recovery Time
(I
F
= 1 Amp, di/dt = 50 A/ms, V
R
= 30 V, T
J
= 25°C)
Symbol
v
F
Value
0.95
0.80
1.05
0.90
5.0
150
50
Unit
Volts
i
R
mA
t
rr
ns
4. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
100
I
F
, FORARD CURRENT (A)
I
F
, FORARD CURRENT (A)
100
10
T
J
= 175°C
175°C
10
125°C
85°C
1
25°C
−40°C
125°C
1
−40°C
0.1
0
0.5
1.0
85°C
25°C
1.5
2.0
0.1
0
0.5
1.0
1.5
2.0
v
F,
INSTANTANEOUS VOLTAGE (V)
v
F,
INSTANTANEOUS VOLTAGE (V)
Figure 1. Maximum Forward Voltage
1000
I
R
, REVERSE CURRENT (mA)
100
10
1.0
0.1
0.01
25°C
175°C
125°C
85°C
I
R
, REVERSE CURRENT (mA)
1000
100
10
1.0
0.1
0.01
Figure 2. Typical Forward Voltage
175°C
125°C
85°C
25°C
−40°C
−40°C
0.001
0
0
50
100
150
200
v
R
, REVERSEE VOLTAGE (V)
250
300
0.001
0
0
50
100
150
200
250
v
R
, REVERSEE VOLTAGE (V)
300
Figure 3. Maximum Reverse Voltage
Figure 4. Typical Reverse Voltage
www.onsemi.com
2
MURD530T4G,
I
F
, AVERAGE FORWARD CURRENT (A)
Rated Voltage Applied
R
qJA
= 3°C/W
10
dc
SQUARE WAVE
5
I
F
, AVERAGE FORWARD CURRENT (A)
15
5
Rated Voltage Applied
R
qJA
= 57°C/W
dc
SQUARE WAVE
0
80
90
100 110 120 130 140 150 160 170 180
T
C
, CASE TEMPERATURE (°C)
0
80
90
100 110 120 130 140 150 160 170 18
T
A
, AMBIENT TEMPERATURE (°C)
Figure 5. Typical Current Derating, Case
P
FO
, AVERAGE POWER DISSIPATION (W)
8
7
C, CAPACITANCE (pF)
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
1
0
SQUARE WAVE
dc
1000
Figure 6. Typical Current Derating, Ambient
T
J
= 25°C
100
10
50
100
150
200
250
I
O
, AVERAGE FORWARD CURRENT (A)
V
R
, REVERSE VOLTAGE (V)
Figure 7. Forward Power Dissipation
Figure 8. Typical Capacitance
10
D = 0.5
R
(t)
, (°C/W)
1
0.2
0.1
0.05
0.1
0.01
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1
10
100
1000
Figure 9. R
(t)
on an Infinite Heatsink Power (J1) 0.800 W Power (J2) 0.800 W
www.onsemi.com
3
MURD530T4G,
100
10
R
(t)
, (°C/W)
1
0.1
0.01
0.001
0.000001
D = 0.5
0.2
0.1
0.05
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1
10
100
1000
Figure 10. PCB Cu Area 650
mm
2
PCB Cu thk 1 oz Power (J1) 0.800 W Power (J2) 0.800 W
www.onsemi.com
4
MURD530T4G,
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
E
b3
L3
1
4
A
B
A
C
c2
Z
D
2
3
DETAIL A
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−−
0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
L4
b2
e
TOP VIEW
NOTE 7
b
0.005 (0.13)
H
M
c
SIDE VIEW
C
Z
C
SEATING
PLANE
BOTTOM VIEW
Z
L2
GAUGE
PLANE
L
L1
DETAIL A
A1
BOTTOM VIEW
ALTERNATE
CONSTRUCTIONS
ROTATED 90 CW
5
SOLDERING FOOTPRINT*
6.20
0.244
3.00
0.118
2.58
0.102
5.80
0.228
1.60
0.063
6.17
0.243
SCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf.
ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
京公网安备 11010802033920号
EEWORLD
