Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
LJxx08xx & QJxx08xHx Series
Description
RoHS
This 8 A High Temperature Alternistor Triac solid state
switch series is designed for AC switching and phase
control applications such as motor speed and temperature
modulation controls, lighting controls, and static switching
relays.
Sensitive
type components guarantee gate control in
Quadrants I & IV needed for digital control circuitry.
Alternistor
type components only operate in quadrants I, II,
& III and are used in circuits requiring high dv/dt capability.
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT (Q1)
Value
8
400 or 600
10 to 35
Unit
A
V
mA
Features & Benefits
• 150°C maximum junction
temperature
• Voltage capability up
to 600V
• Surge capability up
to 84A at 60Hz half cycle
• Solid-state switching
eliminates arcing or
contact bounce that
create voltage transients
events
• Restricted (or limited) RFI
generation, depending on
activation point of
sine wave
• Requires only a short gate
activation pulse in each
half-cycle
• Halogen free and RoHS
compliant
Schematic Symbol
MT2
MT1
• No contacts to wear out
from reaction of switching
G
Applications
Excellent for AC switching and phase control applications
such as heating, lighting, and motor speed controls.
Typical applications are AC solid-state switches, light
dimmers, power tools, home/brown goods and white
goods appliances.
Alternistor Triacs (no snubber required) are used in
applications with high inductive loads requiring the highest
commutation performance.
Internally constructed isolated packages are offered for
ease of heat sinking with highest isolation voltage.
LJxx08xx & QJxx08xHx Series
©2018 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 07/26/18
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
Absolute Maximum Ratings — Sensitive Triac
(4 Quadrants)
Symbol
V
DSM
/V
RSM
I
T(RMS)
I
TSM
I
2
t
di/dt
I
GTM
P
G(AV)
T
stg
T
J
Parameter
Peak non-repetitive blocking voltage
RMS on-state current (full sine wave)
Non repetitive surge peak on-state current
(full cycle, T
J
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 50mA with 0.1µs rise time
Peak gate trigger current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
PW=100 μs
LJxx08Vy/LJxx08Dy
f = 50 Hz
f = 60 Hz
t
p
= 8.3 ms
f = 60 Hz
t
p
≤
10 μs
T
J
= 150°C
T
J
= 150°C
T
J
= 150°C
T
C
= 130°C
t = 20 ms
t = 16.7 ms
Value
700
8
70
84
29
150
0.2
0.3
-40 to 150
-40 to 150
Unit
V
A
A
A
2
s
A/μs
A
W
°C
°C
Note: xx=voltage/10, y = sensitivity
Absolute Maximum Ratings — Alternistor
(3 Quadrants)
Symbol
V
DSM
/V
RSM
I
T(RMS)
I
TSM
I
2
t
di/dt
I
GTM
P
G(AV)
T
stg
T
J
Note: xx=voltage/10, y = sensitivity
Parameter
Peak non-repetitive blocking voltage
RMS on-state current (full sine wave)
Non repetitive surge peak on-state current
(full cycle, T
J
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
Peak gate trigger current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
PW=100 μs
QJxx08VHy/QJxx08DHy
f = 50 Hz
f = 60 Hz
t = 20 ms
t = 16.7 ms
T
C
= 120°C
Value
700
8
70
84
29
T
J
= 150°C
70
1.6
0.4
-40 to 150
-40 to 150
Unit
V
A
A
A
2
s
A/μs
A
W
°C
°C
t
p
= 8.3 ms
f = 60 Hz
t
P
≤
10 μs;
I
GT
≤
I
GTM
T
J
= 150°C
T
J
= 150°C
I
GT
= 10mA
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
— Sensitive Triac
(4 Quadrants)
Symbol
I
GT
V
GT
V
GD
I
H
dv/dt
(dv/dt)c
t
gt
V
D
= V
DRM
R
L
= 3.3 kΩ T
J
= 150°C
I
T
= 100mA
V
D
= V
DRM
Gate Open T
J
= 150°C
(di/dt)c = 4.3 A/ms T
J
= 150°C
I
G
= 100mA PW = 15µs I
T
= 11.3 A(pk)
400V
600V
Test Conditions
V
D
= 12V R
L
= 60
Ω
Quadrant
I – II – III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
TYP
.
TYP
.
TYP
.
LJxx08x8
10
20
1.3
0.15
25
80
50
2
12
Unit
mA
V
V
mA
V/μs
V/μs
μs
Note: xx=voltage/10, x = package,
LJxx08xx & QJxx08xHx Series
©2018 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 07/26/18
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
— Alternistor Triac
(3 Quadrants)
Symbol
I
GT
V
GT
V
GD
I
H
dv/dt
(dv/dt)c
t
gt
Test Conditions
V
D
= 12V R
L
= 60
Ω
V
D
= V
DRM
R
L
= 3.3 kΩ T
J
= 150°C
I
T
= 100mA
V
D
= V
DRM
Gate Open TJ = 150°C
(di/dt)c = 4.3 A/ms T
J
= 150°C
I
G
= 100mA PW = 15µs I
T
= 11.3 A(pk)
I – II – III
I – II – III
I – II – III
Quadrant
MAX.
MAX.
MIN.
MAX.
MIN.
MIN.
TYP
.
400V
600V
25
150
100
15
10
QJxx08xH3
10
1.3
0.15
35
350
250
20
10
QJxx08xH4
35
Unit
mA
V
V
mA
V/μs
V/μs
μs
Note: xx=voltage/10, x = package
Static Characteristics
Symbol
V
TM
Test Conditions
I
TM
= 11.3A t
p
= 380 µs
T
J
= 25°C
LJxx08xy
I
DRM
I
RRM
V
DRM
= V
RRM
QJxx08xHy
T
J
= 125°C
T
J
= 150°C
T
J
= 25°C
T
J
= 125°C
T
J
= 150°C
Note: xx=voltage/10, x=package, y = sensitivity
Value
MAX.
1.50
10
0.5
MAX.
3
10
0.5
3
Unit
V
μA
mA
μA
mA
Thermal Resistances
Symbol
R
θ(JC)
R
θ(J-A)
Parameter
Junction to case (AC)
Junction to ambient
Value
1.5
70
Unit
°C/W
°C/W
Figure 1: Definition of Quadrants
ALL POLARITIES ARE REFERENCED TO MT1
MT2
(
-
)
Figure 2: Normalized DC Gate Trigger Current for
All Quadrants vs. Junction Temperature
1.8
1.6
MT2 POSITIVE
(Positive Half Cycle)
+
MT2
1.4
I
GT
(T
J
= 25°C)
I
GT
GATE
MT1
(+)
I
GT
GATE
1.2
1.0
0.8
0.6
0.4
0.2
MT1
I
GT
MT2
(
-
)
+
I
GT
MT2
I
GT
GATE
MT1
REF
I
GT
GATE
MT1
REF
(+)
Ratio of
-
REF
QII QI
QIII QIV
REF
I
GT
MT2 NEGATIVE
(Negative Half Cycle)
-
0
-40
-15
10
35
60
85
110
135
150
Junction Temperature (T
J
)- ºC
NOTE: Alternistors will not operate in QIV
Note: Alternistors will not operate in QIV
LJxx08xx & QJxx08xHx Series
©2018 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 07/26/18
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
Figure 3: Normalized DC Holding Current
vs. Junction Temperature
Figure 4: Normalized DC Gate Trigger Voltage for
All Quadrants vs. Junction Temperature
1.6
1.6
1.4
V
GT
(T
J
= 25°C)
I
H
(T
J
= 25°C)
1.2
1.0
0.8
0.6
0.4
0.2
I
H
Ratio of
0.4
0
-40
-15
10
35
60
85
110
135
150
Ratio of
0.8
V
GT
1.2
0
-40
-15
10
35
60
85
110
135
150
Junction Temperature (T
J
)- ºC
Junction Temperature (T
J
)- ºC
Figure 5: Power Dissipation (Typical)
vs. RMS On-State Current
8
7
Figure 6: Maximum Allowable Case Temperature
vs. On-State Current
160
150
Average On-State
Power Dissipation (P
D(AV)
) - Watts
6
5
4
3
2
1
0
0
2
4
6
8
Maximum Allowable
Case Temperature (T
C
) - °C
QJxx08VHy/
QJxx08DHy
140
130
120
110
100
90
80
0
2
4
6
8
10
LJxx08Vy/
LJxx08Dy
RMS On-State Current (I
T(RMS)
) - Amps
RMS On-State Current (I
T(RMS)
) - Amps
Figure 7: On-State Current vs. On-State Voltage
(Typical)
20
18
Postitive or Negative Instantaneous
On-State Current (i
T
) - Amps
16
14
12
10
8
6
4
2
0
0.6
0.8
1
1.2
1.4
1.6
1.8
Postitive or Negative Instantaneous
On-State Voltage (v
T
) - Volts
LJxx08xx & QJxx08xHx Series
©2018 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 07/26/18
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
Figure 8: Surge Peak On-State Current vs. Number of Cycles
100
Peak Surge (Non-Repetitive)
On-State Current (I
TSM
) - Amps
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS On-State Current: [I
T(RMS)
]: Maximum Rated
Value at Specified Case Temperature
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state
rated value.
10
1
1
10
100
1000
Surge Current Duration- Full Cycles
Soldering Parameters
Reflow Condition
- Temperature Min (T
s(min)
)
Pre Heat
- Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
Average ramp up rate (Liquidus Temp)
(T
L
) to peak
T
S(max)
to T
L
- Ramp-up Rate
Reflow
- Temperature (T
L
) (Liquidus)
- Time (t
L
)
Pb – Free assembly
150°C
T
P
Temperature
t
P
Ramp-up
200°C
60 – 180 secs
5°C/second max
5°C/second max
217°C
60 – 150 seconds
260
+0/-5
°C
20 – 40 seconds
5°C/second max
8 minutes Max.
280°C
T
L
T
S(max)
t
L
Preheat
Ramp-do
Ramp-down
T
S(min)
t
S
time to peak temperature
25
Peak Temperature (T
P
)
Time within 5°C of actual peak
Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
Time
Environmental Specifications
Test
AC Blocking (V
DRM
)
Temperature Cycling
Temperature/
Humidity
High Temp Storage
Low-Temp Storage
Specifications and Conditions
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 150°C for 1008 hours
MIL-STD-750, M-1051,
100 cycles; -55°C to +150°C; 15-min
dwell-time
EIA / JEDEC, JESD22-A101
1008 hours; 160V - DC: 85°C; 85%
rel humidity
MIL-STD-750, M-1031,
1008 hours; 150°C
1008 hours; -40°C
MIL-STD-750 Method 2031
ANSI/J-STD-002, category 3, Test A
MIL-STD-750, M-2036 Cond E
Physical Specifications
Terminal Finish
Body Material
Terminal Material
100% Matte Tin-plated
UL Recognized compound meeting
flammability rating V-0.
Copper Alloy
Design Considerations
Careful selection of the correct component for the application’s operating
parameters and environment will go a long way toward extending the
operating life of the Thyristor. Good design practice should limit the
maximum continuous current through the main terminals to 75% of the
component rating. Other ways to ensure long life for a power discrete
semiconductor are proper heat sinking and selection of voltage ratings for
worst case conditions. Overheating, overvoltage (including dv/dt), and surge
currents are the main killers of semiconductors. Correct mounting, soldering,
and forming of the leads also help protect against component damage.
LJxx08xx & QJxx08xHx Series
Resistance to
Solder Heat
Solderability
Lead Bend
©2018 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 07/26/18
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