QPA4501
®
3 W, 28 V, 4.4
–
5.0 GHz GaN PA Module
Product Overview
The QPA4501 is an integrated 2-stage Power Amplifier
Module designed for massive MIMO applications up to
3 W RMS at the device output covering frequency range
from 4.4 to 5.0 GHz.
The module is 50 Ω input and output and requires minimal
external components. The module is also compact and
offers a much smaller footprint than traditional discrete
component solutions.
The QPA4501 incorporates a Doherty final stage delivering
high power added efficiency for the entire module up to
3 W average power.
RoHS compliant.
36 Pad 6 x 10 mm Plastic QFN Package
Key Features
•
Operating Frequency Range: 4.4 – 5.0 GHz
•
Operating Drain Voltage: +28 V
•
50 Ω Input / Output
•
Integrated Doherty Final Stage
•
Gain at 1.25 W Avg.: 29.9 dB
•
Power Added Efficiency at 1.25 W Avg.: 25.7%
•
Power Added Efficiency at 3 W Avg.: 38%
•
6 x 10 mm Plastic Surface Mount Package
Note: T = +25°C, single-carrier, 20 MHz LTE signal with 7.8 dB PAR at
0.01% CCDF.
Functional Block Diagram
Applications
•
5G Massive MIMO
•
W-CDMA / LTE
•
Macrocell Base Station Driver
•
Microcell Base Station
•
Small Cell Final Stage
•
Active Antenna
•
General Purpose Applications
Ordering Information
Part No.
QPA4501SB
QPA4501SR
QPA4501TR13
QPA4501EVB01
Data Sheet Rev. B, July 20, 2018 | Subject to change without notice.
Description
Sample Bag – 5 Pieces
Short Reel – 100 Pieces
13” Reel – 2500 Pieces
Tested 4.4 – 5.0 GHz EVB
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QPA4501
®
3 W, 28 V, 4.4
–
5.0 GHz GaN PA Module
Absolute Maximum Ratings
Parameter
Breakdown Voltage (BV
DG
)
Gate Voltage (V
G1,2,3
)
Drain Voltage (V
D1,2,3
)
RF Input Power
(1)
VSWR Mismatch, P3dB Pulse
(10% Duty Cycle, 100 µs
Pulse Width), T = +25°C
Power Dissipation
Recommended Operating Conditions
Units
V
V
V
dBm
Value
120
−7 to +2
+40
+12
10:1
63
Parameter
Gate Voltage (V
G1
)
Gate Voltage (V
G2
)
Gate Voltage (V
G3
)
Drain Voltage (V
D1,2,3
)
Quiescent Current (I
DQ1
)
Quiescent Current (I
DQ3
)
Power Dissipation
Min
Typ
−2.6
−4.2
−2.6
+28
50
75
3.8
Max
Units
V
V
V
V
mA
mA
W
W
Notes:
1. Tested at 4.7 GHz, T = +25°C, single-carrier, 20 MHz LTE signal
with 7.8 dB PAR at 0.01% CCDF.
2. Exceeding any one or a combination of the Absolute Maximum
Rating conditions may cause permanent damage to the device.
Extended application of Absolute Maximum Rating conditions to
the device may reduce device reliability.
Note: Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Parameter
Frequency Range
Driver Quiescent Current (I
DQ1
)
Carrier Quiescent Current (I
DQ3
)
Gain
Saturated Power (P
SAT
)
Power Added Efficiency (PAE)
Raw ACLR
P
AVG
= 31 dBm
Pulse (10% Duty Cycle, 500 µs Width), P
IN
= 19 dBm
P
AVG
= 31 dBm
P
AVG
= 31 dBm
with 7.8 dB PAR at 0.01% CCDF on the reference design fixture.
Conditions
Min
4.4
Typ
50
75
Max
5.0
Units
GHz
mA
mA
dB
dBm
%
dBc
26.0
41.9
19.8
29.9
43.5
25.7
−35.1
Test conditions unless otherwise noted: V
D1,2,3
= +28 V, I
DQ1
= 50 mA, I
DQ3
= 75 mA, V
G2
= −4.2 V, T = +25°C, using a single-carrier, 20 MHz LTE signal
Thermal Information
Parameter
Peak IR Surface Thermal Resistance
at Average Power (θ
JC
)
Conditions
T
CASE
= +85°C, T
CH
= 91°C
CW: P
DISS
= 4 W, P
OUT
= 1.25 W
Values
1.5
Units
°C/W
Notes:
1. Based on expected carrier amplifier efficiency of Doherty.
2. P
OUT
assumes 10% peaking amplifier contribution of total average Doherty rated power.
3. Thermal resistance is measured to package backside.
4. Refer to the following document:
GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Data Sheet Rev. B, July 20, 2018 | Subject to change without notice.
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QPA4501
®
3 W, 28 V, 4.4
–
5.0 GHz GaN PA Module
QPA4501 4.4 – 5.0 GHz Reference Design
EVB Layout
EVB Schematic
PCB Stackup and Material
Notes:
1. All dimensions are in inches.
2. PCB is soldered on a 2 in. x 2 in. copper base plate with 0.25 in. thickness.
Bill of Materials – QPA4501 4.4 – 5.0 GHz Evaluation Board
Reference Des.
C1, C10
C4, C7, C14
C3, C8, C11, C13
C2, C9, C12
J1, J2
P1, P2
P3
U1
Value
220 µF
22,000 pF
4.7 µF
10 µF
Description
Capacitor, 220 µF, electrolytic, 50 V
Capacitor, 22,000 pF, 10%, 50 V, X7R, 0603
Capacitor, 4.7 µF, 10%, 50 V, X7R, 1206
Capacitor, 10 µF, 10%, 50 V, X7R, 1210
Connector, SMA, 4-Hole Panel Mount Jack
Connector, HDR, ST, PLRZD, 5-Pin, 0.100”
Connector, HDR, ST, 3-PIN, T/H
3 W 4.4 – 5.0 GHz GaN PA Module
Manufacturer
Panasonic
Murata
Murata
Murata
Gigalane
ITW Pancon
Molex
Qorvo
Part Number
EEEFK1H221P
GRM188R71H223KA01D
GRM31CR71H475KA12L
GRM32ER71H106KA
PAF-S00-000
MPSS100-5-C
22-28-4033
QPA4501
Data Sheet Rev. B, July 20, 2018 | Subject to change without notice.
3 of 12
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QPA4501
®
3 W, 28 V, 4.4
–
5.0 GHz GaN PA Module
Performance Plots
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
Gain vs. Average Output Power
I
DQ1
= 50 mA, I
DQ3
= 75 mA,V
G2
= −4.2 V,V
D1,2,3
= +28 V,
1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
55
50
PAE vs. Average Output Power
I
DQ1
= 50 mA, I
DQ3
= 75 mA,V
G2
= −4.2 V,V
D1,2,3
= +28 V,
1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
Power Added Efficiency (%)
45
40
35
30
25
20
4.4 GHz
Gain (dB)
4.4 GHz
4.6 GHz
4.8 GHz
5.0 GHz
15
10
4.6 GHz
4.8 GHz
5.0 GHz
Temp.=+25°C
5
Temp. = +25°C
25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
Average Output Power (dBm)
Average Output Power (dBm)
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
Peak Power vs. Average Output Power
I
DQ1
= 50 mA, I
DQ3
= 75 mA,V
G2
= −4.2 V,V
D1,2,3
= +28 V,
1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
4.4 GHz
4.6 GHz
4.8 GHz
5.0 GHz
Temp. = +25°C
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
-46
-48
-50
ACPR vs. Average Output Power
I
DQ1
= 50 mA, I
DQ3
= 75 mA,V
G2
= −4.2 V,V
D1,2,3
= +28 V,
1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
Peak Power at 0.01% CCDF (dBm)
ACPR (dBc)
4.4 GHz
4.6 GHz
4.8 GHz
5.0 GHz
Temp. = +25°C
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
Average Output Power (dBm)
Average Output Power (dBm)
Test conditions unless otherwise noted: V
D1,2,3
= +28 V, I
DQ1
= 50 mA, I
DQ3
= 75 mA, V
G2
= −4.2 V, T = +25°C, tested using a single-carrier, 20 MHz LTE
signal with 7.8 dB PAR at 0.01% CCDF on a reference design fixture.
Data Sheet Rev. B, July 20, 2018 | Subject to change without notice.
4 of 12
www.qorvo.com
QPA4501
®
3 W, 28 V, 4.4
–
5.0 GHz GaN PA Module
Performance Plots
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
Gain vs. Average Output Power
I
DQ1
= 50 mA, I
DQ3
= 75 mA,V
D1,2,3
= +28 V, 1C 20 MHz LTE,
PAR = 7.8 dB @ 0.01% CCDF Freq = 4.6 GHz
55
50
PAE vs. Average Output Power
I
DQ1
= 50 mA, I
DQ3
= 75 mA,V
D1,2,3
= +28 V, 1C 20 MHz LTE,
PAR = 7.8 dB @ 0.01% CCDF Freq = 4.6 GHz
Power Added Efficiency (%)
−40°C, V
G2
= -3.77 V
45
40
35
30
25
20
15
10
5
−40°C, V
G2
= -3.77 V
+25°C, V
G2
= -4.08 V
+105°C, V
G2
= -4.16 V
+25°C, V
G2
= -4.08 V
+105°C, V
G2
= -4.16 V
Gain (dB)
25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
Average Output Power (dBm)
Average Output Power (dBm)
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
Peak Power vs. Average Output Power
I
DQ1
= 50 mA, I
DQ3
= 75 mA,V
D1,2,3
= +28 V, 1C 20 MHz LTE,
PAR = 7.8 dB @ 0.01% CCDF Freq = 4.6 GHz
−40°C, V
G2
= -3.77 V
+25°C, V
G2
= -4.08 V
+105°C, V
G2
= -4.16 V
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
-46
ACPR vs. Average Output Power
I
DQ1
= 50 mA, I
DQ3
= 75 mA,V
D1,2,3
= +28 V, 1C 20 MHz LTE,
PAR = 7.8 dB @ 0.01% CCDF Freq = 4.6 GHz
−40°C, V
G2
= -3.77 V
+25°C, V
G2
= -4.08 V
+105°C, V
G2
= -4.16V
Peak Power at 0.01% CCDF (dBm)
ACPR (dBc)
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
Average Output Power (dBm)
Average Output Power (dBm)
Test conditions unless otherwise noted: V
D1,2,3
= +28 V, I
DQ1
= 50 mA, I
DQ3
= 75 mA, V
G2
= −4.2 V, tested at 4.6 GHz using a single-carrier, 20 MHz LTE
signal with 7.8 dB PAR at 0.01% CCDF on a reference design fixture.
Data Sheet Rev. B, July 20, 2018 | Subject to change without notice.
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