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RJK4014DPK-00-T0

Description
Silicon N Channel MOS FET High Speed Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size69KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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RJK4014DPK-00-T0 Overview

Silicon N Channel MOS FET High Speed Power Switching

RJK4014DPK-00-T0 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-3P
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (ID)24 A
Maximum drain-source on-resistance0.24 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)72 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
RJK4014DPK
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1576-0100
Rev.1.00
Aug 08, 2007
Features
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
G
1. Gate
2. Drain (Flange)
3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
µs,
duty cycle
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
150°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
Note2
θch-c
Tch
Tstg
Ratings
400
±30
24
72
24
72
8
3.65
150
0.833
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1576-0100 Rev.1.00 Aug 08, 2007
Page 1 of 3

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Description Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching

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