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1N5402G

Description
3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size24KB,2 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance
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1N5402G Overview

3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5402G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron Semiconductor
Parts packaging codeDO-201AD
package instructionO-PALF-W2
Contacts2
Reach Compliance Code_compli
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)265
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N5400G
THRU
1N5408G
GLASS PASSIVATED
JUNCTION PLASTIC RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes
FEATURES
*
*
*
*
*
High reliability
Low leakage
Low forward voltage drop
High current capability
Glass passivated junction
DO-201AD
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 1.18 grams
1.0 (25.4)
MIN.
.052 (1.3)
DIA.
.048 (1.2)
.375 (9.5)
.335 (8.5)
.220 (5.6)
.197 (5.0)
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375” (9.5mm) lead length at T
L
= 105
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note)
Typical Thermal Resistance
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 3.0A DC
Maximum DC Reverse Current
@T
A
= 25
o
C
at Rated DC Blocking Voltage
@T
A
= 100
o
C
Maximum Full Load Reverse Current Average, Full Cycle
.375” (9.5mm) lead length at T
L
= 75
o
C
NOTES : Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
SYMBOL
V
F
1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G UNITS
1.1
Volts
5.0
uAmps
300
30
uAmps
2001-6
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
R
θ
JA
T
J
, T
STG
1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G UNITS
50
35
50
100
70
100
200
140
200
400
280
400
3.0
200
40
30
-65 to + 175
0
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
pF
C/ W
0
C
I
R

1N5402G Related Products

1N5402G 1N5400G 1N5401G 1N5404G 1N5406G 1N5407G 1N5408G
Description 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Parts packaging code DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
package instruction O-PALF-W2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 O-PALF-W2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2
Contacts 2 2 2 2 2 2 2
Reach Compliance Code _compli not_compliant not_compliant _compli not_compliant _compli _compli
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V 1 V 1 V
JEDEC-95 code DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
JESD-609 code e3 e3 e3 e3 e3 e3 e3
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A 150 A 150 A
Number of components 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) 265 265 265 265 265 265 265
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 50 V 100 V 400 V 600 V 800 V 1000 V
surface mount NO NO NO NO NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor - Rectron Semiconductor
Base Number Matches 1 1 1 - 1 1 -
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