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1N5404

Description
3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size677KB,1 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
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1N5404 Overview

3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5404 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionGREEN, PLASTIC PACKAGE-2
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingPURE Tin
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum repetitive peak reverse voltage400 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current200 A

1N5404 Related Products

1N5404 1N5400 1N5401 1N5403 1N5405 1N5406 1N5407 1N5408
Description 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE,1KV V(RRM),DO-204AE
state ACTIVE ACTIVE ACTIVE - - DISCONTINUED - CONSULT MFR
Diode type rectifier diode rectifier diode rectifier diode - - rectifier diode - rectifier diode
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