Data Sheet
FEATURES
High saturated output power (P
SAT
): 40.5 dBm typical
High small signal gain: 18.5 dB typical
High power added efficiency (PAE): 69% typical
Instantaneous bandwidth: 0.01 GHz to 1.1 GHz
Supply voltage: V
DD
= 28 V at 100 mA
Internal prematching
Simple and compact external tuning for optimal
performance
32-lead, 5 mm × 5 mm, LFCSP package: 25 mm
2
>10 W, GaN Power Amplifier,
0.01 GHz to 1.1 GHz
HMC1099
FUNCTIONAL BLOCK DIAGRAM
32
GND
31
NIC
30
NIC
29
NIC
28
NIC
27
NIC
26
NIC
25
GND
1
2
3
4
5
6
7
8
GND
NIC
NIC
RFIN/V
GG
RFIN/V
GG
NIC
NIC
GND
HMC1099
24
23
22
21
20
19
18
17
GND
NIC
NIC
RFOUT/V
DD
RFOUT/V
DD
NIC
NIC
GND
9
10
11
12
13
14
15
16
GND
NIC
NIC
NIC
NIC
NIC
NIC
GND
APPLICATIONS
Extended battery operation for public mobile radios
Power amplifier stage for wireless infrastructures
Test and measurement equipment
Commercial and military radars
General-purpose transmitter amplification
PACKAGE
BASE
13525-001
NIC =
NO INTERNAL CONNECTION. THESE PINS
ARE NOT CONNECTED INTERNALLY.
Figure 1.
GENERAL DESCRIPTION
The
HMC1099
is a gallium nitride (GaN), broadband power
amplifier delivering >10 W with up to 69% PAE across an
instantaneous bandwidth of 0.01 GHz to 1.1 GHz, and with a
±0.5 dB typical gain flatness.
The
HMC1099
is ideal for pulsed or continuous wave (CW)
applications, such as wireless infrastructure, radars, public
mobile radios, and general-purpose amplification.
The
HMC1099
amplifier is externally tuned using low cost,
surface-mount components and is available in a compact
LFCSP package.
Multifunction pin names may be referenced by their relevant
function only.
Rev. A
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HMC1099
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Electrical Specifications ............................................................... 3
Total Supply Current by V
DD
....................................................... 4
Absolute Maximum Ratings ............................................................ 5
ESD Caution .................................................................................. 5
Pin Configuration and Function Descriptions ............................. 6
Data Sheet
Interface Schematics .....................................................................6
Typical Performance Characteristics ..............................................7
Theory of Operation ...................................................................... 13
Applications Information .............................................................. 14
Typical Application Circuit ....................................................... 14
Evaluation PCB ........................................................................... 15
Bill of Materials ........................................................................... 15
Outline Dimensions ....................................................................... 16
Ordering Guide .......................................................................... 16
REVISION HISTORY
12/2016—Rev. 0 to Rev. A
Changed HCP-32-2 to CG-32-1 .................................. Throughout
Updated Outline Dimensions ....................................................... 16
Changes to Ordering Guide .......................................................... 16
1/2016—Revision 0: Initial Version
Rev. A | Page 2 of 16
Data Sheet
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
T
A
= 25°C, V
DD
= 28 V, I
DD
= 100 mA, frequency range = 0.01 GHz to 0.4 GHz.
Table 1.
Parameter
FREQUENCY RANGE
GAIN
Small Signal Gain
Gain Flatness
RETURN LOSS
Input
Output
POWER
Output Power for 4 dB Compression
Power Gain for P4dB Compression
Saturated Output Power
Power Gain for P
SAT
Power Added Efficiency
OUTPUT THIRD-ORDER INTERCEPT
NOISE FIGURE
TOTAL SUPPLY CURRENT
Symbol
Min
0.01
18
Typ
Max
0.4
Unit
GHz
dB
dB
dB
dB
dBm
dB
dBm
dB
%
dBm
dB
mA
Test Conditions/Comments
HMC1099
20
±1
12
15
P4dB
P
SAT
PAE
IP3
I
DD
40
15
40.5
13
73
49
8
100
>10 W saturated output power
Measurement taken at P
OUT
/tone = 30 dBm
Adjust the gate bias control voltage (V
GG
) between
−8 V to 0 V to achieve an I
DD
= 100 mA typical
T
A
= 25°C, V
DD
= 28 V, I
DD
= 100 mA, frequency range = 0.4 GHz to 0.7 GHz.
Table 2.
Parameter
FREQUENCY RANGE
GAIN
Small Signal Gain
Gain Flatness
RETURN LOSS
Input
Output
POWER
Output Power for 4 dB Compression
Power Gain for P4dB Compression
Saturated Output Power
Power Gain for P
SAT
Power Added Efficiency
OUTPUT THIRD-ORDER INTERCEPT
NOISE FIGURE
TOTAL SUPPLY CURRENT
Symbol
Min
0.4
16.5
Typ
Max
0.7
Unit
GHz
dB
dB
dB
dB
dBm
dB
dBm
dB
%
dBm
dB
mA
Test Conditions/Comments
18.5
±0.25
9.5
14
P4dB
P
SAT
PAE
IP3
I
DD
40.5
14
40.5
13
69
48
5.5
100
>10 W saturated output power
Measurement taken at P
OUT
/tone = 30 dBm
Adjust the gate bias control voltage (V
GG
) between
−8 V to 0 V to achieve an I
DD
= 100 mA typical
Rev. A | Page 3 of 16
HMC1099
T
A
= 25°C, V
DD
= 28 V, I
DD
= 100 mA, frequency range = 0.7 GHz to 1.1 GHz.
Table 3.
Parameter
FREQUENCY RANGE
GAIN
Small Signal Gain
Gain Flatness
RETURN LOSS
Input
Output
POWER
Output Power for 4 dB Compression
Power Gain for P4dB Compression
Saturated Output Power
Power Gain for P
SAT
Power Added Efficiency
OUTPUT THIRD-ORDER INTERCEPT
NOISE FIGURE
TOTAL SUPPLY CURRENT
Symbol
Min
0.7
16.5
Typ
Max
1.1
Unit
GHz
dB
dB
dB
dB
dBm
dB
dBm
dB
%
dBm
dB
mA
Test Conditions/Comments
Data Sheet
18.5
±0.5
12
17
P4dB
P
SAT
PAE
IP3
I
DD
41.5
14
41.5
13.5
69
47
5
100
>10 W saturated output power
Measurement taken at P
OUT
/tone = 30 dBm
Adjust the gate bias control voltage (V
GG
) between
−8 V to 0 V to achieve an I
DD
= 100 mA typical
TOTAL SUPPLY CURRENT BY V
DD
Table 4.
Parameter
SUPPLY CURRENT
V
DD
= 24 V
V
DD
= 28 V
Symbol
I
DD
Min
Typ
Max
Unit
Test Conditions/Comments
Adjust the gate bias control voltage (V
GG
) between −8 V to 0 V to achieve an
I
DD
= 100 mA typical
100
100
mA
mA
Rev. A | Page 4 of 16
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
1
Drain Bias Voltage (V
DD
)
Gate Bias Voltage (V
GG
)
Radio Frequency (RF) Input Power (RFIN)
Maximum Forward Gate Current
Maximum Voltage Standing Wave Ratio
(VSWR)
2
Channel Temperature
Maximum Peak Reflow Temperature (MSL3)
3
Continuous Power Dissipation, P
DISS
(T
A
= 85°C,
Derate 89 mW/°C Above 85°C)
Thermal Resistance (Junction to Back of
Paddle)
Storage Temperature Range
Operating Temperature Range
ESD Sensitivity (Human Body Model)
1
HMC1099
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Rating
32 V dc
−8 V to 0 V dc
33 dBm
4 mA
6:1
225°C
260°C
12.5 W
11.2°C/W
−55°C to +150°C
−40°C to +85°C
Class 1B,
passed 500 V
ESD CAUTION
When referring to a single function of a multifunction pin in the parameters,
only the portion of the pin name that is relevant to the Absolute Maximum
Rating is listed. For full pin names of multifunction pins, refer to the Pin
Configuration and Function Descriptions section.
2
Restricted by maximum power dissipation.
3
See the Ordering Guide for additional information.
Rev. A | Page 5 of 16
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