BGS
MA
BGS
MIPI .
Key Features
•
•
•
•
•
•
MA
S P T s w i tc h f o r LT E d i v e r s i t y, Tx a n d L A A a p p l i c at i o n s
. to GHz coverage for LTE and LAA application
LTE TX Power handling capabilities
Ultra low insertion loss: . dB at Band
Small form factor . mm x . mm
Fully compatible with MIPI . RFFE standard
No decoupling capacitors required if no DC applied on RF lines
Applications
The SP T switch is a band selection switch for LTE applications. With LTE TX power handling capability it is suitable for
both LTE diversity path and LTE uplink Tx applications. The switch covers up to GHz, so it supports Band , Band and
LAA.
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC /
/ .
Block diagram
RF1
RF2
RF3
RF4
RF5
ANT
SP8T
RF6
RF7
RF8
VIO
MIPI
Interface
GND
SCLK
SDATA
www.infineon.com
Data Sheet
Revision .
- -
BGS MA
MIPI . SP T switch for LTE diversity, Tx and LAA applications
Table of Contents
Table of Contents
Table of Contents
Features
Maximum Ratings
Operation ranges
RF Characteristics
MIPI RFFE Specification
Package related information
Data Sheet
Revision .
- -
BGS MA
Features
MIPI . SP T switch for LTE diversity, Tx and LAA applications
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
. to GHz coverage for LTE and LAA application
Suitable for LTE / WCDMA / TDCDMA Applications
LTE TX Power handling capabilities
Ultra low insertion loss: . dB at Band
Small form factor . mm x . mm
Fully compatible with MIPI . RFFE standard
No decoupling capacitors required if no DC applied on RF lines
Low harmonic generation
High port-to-port-isolation
On chip control logic including ESD protection
No power supply blocking required
High EMI robustness
RoHS and WEEE compliant package
Description
This SP T RF switch is a perfect solution for multimode handsets based on LTE, WCDMA and TDCDMA. It is based on Infineon’s
proprietary technology and has excellent RF performance. The ultra-low insertion loss helps customers to achieve high system
sensitivity, the coverage of LTE Tx power and GHz enables very broad application. It features DC-free RF ports, external DC
blocking capacitors at the RF ports are only required if DC voltage is applied externally. Its on chip MIPI RFFE . controller is
fully compatible with industry standard.
Product Name
BGS MA
Marking
B
Package
ATSLP- -
Data Sheet
Revision .
- -
BGS MA
MIPI . SP T switch for LTE diversity, Tx and LAA applications
Maximum Ratings
Maximum Ratings
Table : Maximum Ratings, Table I
at
T
A
=
25
◦
C,
unless otherwise specified
Parameter
Frequency Range
Supply voltage
)
Symbol
Min.
Values
Typ.
–
–
-
–
-
-
-
–
–
–
–
–
–
–
+
+
+
Max.
.
.
.
Unit
GHz
V
◦
Note / Test Condition
)
f
V
IO
T
STG
P
RF
_
max
V
ESD
CDM
V
ESD
HBM
)
–
–
Short momentary /
Storage temperature range
RF input power at all TRx ports
ESD capability, CDM
ESD capability, HBM
)
)
C
dBm
V
kV
kV
◦
ESD capability, system level (RF port)
Junction temperature
)
V
ESD
ANT
T
j
ANT vs system GND, with
shunt inductor
–
nH
C
Switch has a low-pass response. For higher frequencies, losses have to be considered for their impact on thermal heating. The DC voltage at RF ports
V
RFDC
has
to be V.
)
Note: Consider any ripple voltages on top of
V
. Including RF ripple,
V
must not exceed the maximum ratings:
V
=
V
IO
IO
IO
DC
+
V
Ripple
.
)
Field-Induced Charged-Device Model ANSI/ESDA/JEDEC JS-
. Simulates charging/discharging events that occur in production equipment and processes.
Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing.
)
Human Body Model ANSI/ESDA/JEDEC JS-
(R =
1,5
kΩ,
C
=
100
pF).
)
IEC
- - (R =
330
Ω,
C
=
150
pF),
contact discharge.
Warning: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Expo-
sure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may
a ect device reliability and life time. Functionality of the device might not be given under these conditions.
Table : Maximum Ratings, Table II
at
T
A
=
25
◦
C,
unless otherwise specified
Parameter
Thermal resistance junction - soldering
point
Maximum DC-voltage on RF-Ports and
RF-Ground
Symbol
Min.
R
thJS
–
Values
Typ.
Max.
–
–
Unit
K/W
V
Note / Test Condition
–
No DC voltages allowed on RF-
Ports
V
RFDC
Data Sheet
Revision .
- -
BGS MA
MIPI . SP T switch for LTE diversity, Tx and LAA applications
Operation ranges
Operation ranges
Table : Operation ranges at
T
A
= −
Parameter
Supply Voltage
RFFE input high voltage
RFFE input low voltage
RFFE output high voltage
RFFE output low voltage
RFFE control input capacitance
Supply Current
Supply Current
SCLK and SDATA
◦
C to
◦
C
Values
Min.
Typ.
.
–
–
. *V
IO
–
–
–
–
–
–
–
Max.
.
V
IO
. *V
IO
V
IO
. *V
IO
V
V
V
V
V
pF
A
A
–
–
–
–
–
–
Operating state
Idle State
.
. *V
IO
Unit
Note / Test Condition
Symbol
V
IO
V
IH
V
IL
V
OH
V
OL
C
Ctrl
I
IO
I
IO
Table : RF input power
Parameter
RF input power on TRX ports
RF input power on TRX ports
Symbol
Min.
Values
Typ.
–
–
Max.
dBm
dBm
CW / VSWR : /
CW / VSWR : /
◦
Unit
Note / Test Condition
C
C
P
RF
P
RF
–
–
◦
Data Sheet
Revision .
- -
京公网安备 11010802033920号
EEWORLD
