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1N5404

Description
3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size157KB,2 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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1N5404 Overview

3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5404 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionGREEN, PLASTIC PACKAGE-2
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingPURE Tin
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum repetitive peak reverse voltage400 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current200 A
CE
CHENYI ELECTRONICS
1N5400 THRU 1N5408
GENERAL PURPOSE PLASTIC RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 3.0Amperes
FEATURES
. The plastic package has Underwrites Laboratory
Flammability Classification 94V-0
. Construction utilizes void-free molded plastic technique
. High surge current capability
. 3.0A operation at
T
L
=75
. Typical
T
R
less than 0.1
with no thermal runaway
A
/10 seconds,
. High temperature soldering guaranteed: 250
0.375"(9.5mm)lead length,5lbs.(2.3kg)tension
MECHANICAL DATA
.
Case:
JEDEC DO-15 molded plastic body
.
Terminals:
lead solderable per MIL-STD-750,method 2026
.
Polarity:
Color band denotes cathode end
.
Mounting Position:
Any
.
Weight:
0.042 ounce, 1.19 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherwise specified,Single phase,half wave 60Hz,resistive or inductive)
load. For capacitive load,derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Macimum average forward rectified
current 0.375"(9.5mm)lead length at
T
A
=70
Peak forward surge current 8.3ms
sing-wave superimposed on rated load
(JEDEC method)
T
A
=70
Maximum instantaneous forward voltage at 1.5 A
Maximum reverse
current at rated DC blocking voltage
Typeical thermal resistance(Note 2)
TA=25
TA=100
V
F
I
R
I
FSM
V
RRM
V
RMS
V
DC
I
(AV)
1N
5400
50
35
50
1N
5401
100
70
100
1N
5402
200
140
200
1N
5403
300
210
300
1N
5404
400
280
400
3.0
1N
5405
500
350
500
1N
5406
600
420
600
1N
5407
800
560
800
1N
5408
1000
700
1000
Units
Volts
Volts
Volts
Amps
200.0
Amps
1.1
10.0
Volts
A
300.0
R
C
J
T
A
T
J
T
STG
JA
20.0
/W
pF
Typical junction Capacitance(Note 1)
Maximum DC Blocking Voltage temperature
Operating and storage temperature range
35.0
+150.0
-50 to +175
Notes:
1. Measured at 1MHz and applied reverse voltage of 4.0V DC
2.Thermal resistance from juntion to ambient and from junction lead at 0.375"(9.5mm)lead length,
P.C.B. Mounted
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 2

1N5404 Related Products

1N5404 1N5400 1N5401 1N5402 1N5403 1N5405 1N5406 1N5407 1N5408
Description 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE,1KV V(RRM),DO-204AE
Number of terminals 2 2 2 2 - - 2 - -
Number of components 1 1 1 1 - - 1 - -
Processing package description GREEN, PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 - - LEAD FREE, PLASTIC, CASE 267-05, 2 PIN - -
state ACTIVE ACTIVE ACTIVE DISCONTINUED - - DISCONTINUED - CONSULT MFR
packaging shape round round round round - - round - -
Package Size LONG FORM LONG FORM LONG FORM LONG FORM - - LONG FORM - -
Terminal form Wire Wire Wire Wire - - Wire - -
terminal coating PURE Tin MATTE Tin tin tin lead - - MATTE Tin - -
Terminal location AXIAL AXIAL AXIAL AXIAL - - AXIAL - -
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy - - Plastic/Epoxy - -
structure single single single single - - single - -
Shell connection isolation isolation isolation isolation - - isolation - -
Diode component materials silicon silicon silicon silicon - - silicon - -
Diode type rectifier diode rectifier diode rectifier diode rectifier diode - - rectifier diode - rectifier diode
application EFFICIENCY GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE - - GENERAL PURPOSE - -
Phase 1 1 1 1 - - 1 - -
Maximum repetitive peak reverse voltage 400 V 50 V 100 V 200 V - - 600 V - -
Maximum average forward current 3 A 3 A 3 A 3 A - - 3 A - -
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A - - 200 A - -
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