RGF1A-RGF1M
RGF1A - RGF1M
Features
•
•
•
•
•
•
Glass passivated junction.
For surface mounted application.
Low forward voltage drop.
High current capability.
Easy pick and place.
High surge current capability.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Fast Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
1A
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current,
@ T
L
= 125°C
Non-repetitive Peak Forward Surge
Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
50
1B
100
1D
200
Value
1G
400
1.0
1J
600
1K
800
1M
1000
Units
V
A
30
-65 to +175
-65 to +175
A
°C
°C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
R
θJL
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient*
Thermal Resistance, Junction to Lead*
Value
1.76
85
28
Units
W
°C/W
°C/W
*
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Symbol
V
F
t
rr
I
R
T
A
= 25°C unless otherwise noted
Parameter
1A
Forward Voltage @ 1.0 A
Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 125°C
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
150
1B
1D
Device
1G
1.3
250
5.0
100
8.5
500
1J
1K
1M
Units
V
ns
µA
µA
pF
C
T
2001
Fairchild Semiconductor Corporation
RGF1A-RGF1M, Rev. G
RGF1A-RGF1M
Fast Rectifiers
(continued)
Typical Characteristics
Average Rectified Forward Current, I
F
[A]
1.25
Peak Forward Surge Current, I
FSM
[A]
50
1
40
0.75
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 0.2 x 0.2"
(5.0 x 5.0 mm)
COPPER PAD AREAS
30
0.5
20
0.25
10
0
0
25
50
75
100
125
Ambient Temperature [ºC]
150
175
0
1
2
5
10
20
Number of Cycles at 60Hz
50
100
Figure 1. Forward Current Derating Curve
Figure 2. Non-Repetitive Surge Current
20
10
Forward Current, I
F
[A]
Reverse Current, I
R
[mA]
30
10
T
A
= 150
º
C
T
A
= 125
º
C
1
1
T
A
= 100
º
C
T
A
= 25
º
C
0.1
Pulse Width = 300µs
µ
2% Duty Cycle
0.1
T
A
= 25
º
C
0.01
0.4
0.6
0.8
1
1.2
1.4
Forward Voltage, V
F
[V]
1.6
1.8
0.01
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage [%]
Figure 3. Forward Voltage Characteristics
Figure 4. Reverse Current vs Reverse Voltage
50
Total Capacitance, C
T
[pF]
20
10
5
2
1
1
2
5
10
20
Reverse Voltage, V
R
[V]
50
100
Figure 5. Total Capacitance
2001
Fairchild Semiconductor Corporation
RGF1A-RGF1M, Rev. G
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E
2
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TM
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®
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®
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®
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As used herein:
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systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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