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1N5406

Description
3 A, 600 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size47KB,2 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
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1N5406 Overview

3 A, 600 V, SILICON, RECTIFIER DIODE

1N5406 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instructionO-PALF-W2
Reach Compliance Codeunknown
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage600 V
Maximum reverse current5 µA
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
LESHAN RADIO COMPANY, LTD.
1N5400– 1N5408
3A
3A GENERAL DIODES
Maximum Average
TYPE
Maximum
Peak Reverse
Voltage
PRV
V
PK
Rectified Current
@ Half-Wave
Resistive Load 60Hz
I
O
@ T
L
A
AV
ºC
Maximum
Forward Peak
Surge Current @
8.3ms Superimposed
I
FM
(Surge)
A
PK
Maximum
Reverse
Current @ PRV
@ T
A
=25ºC
I
R
Maximum
Forward
Voltage
@ T
A
=25ºC
I
FM
A
PK
V
FM
V
PK
Package
Dimensions
µAdc
1N5400
1N5401
1N5402
1N5404
1N5406
1N5407
1N5408
50
100
200
400
600
800
1000
3.0
105
200
5.0
3.0
1.1
DO –
201AD
1.0(25.4)
MIN
.375(9.5)
.335(8.5)
1.0(25.4)
MIN
.052(1.3)
.048(1.2)
DIA
.220(5.6) DIA
.197(5.0)
DO – 201AD
28A–1/2

1N5406 Related Products

1N5406 1N5401 1N5403 1N5404 1N5405 1N5407
Description 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD
Maker LRC LRC LRC LRC LRC LRC
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 ROHS COMPLIANT, PLASTIC PACKAGE-2
Reach Compliance Code unknown unknown unknown unknown unknown unknown
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JEDEC-95 code DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A 200 A 200 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 600 V 100 V 300 V 400 V 500 V 800 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
surface mount NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
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