BTA16 B
BTB16 B
STANDARD TRIACS
.
.
.
FEATURES
HIGH SURGE CURRENT CAPABILITY
COMMUTATION : (dV/dt)c > 10V/µs
BTA Family :
INSULATING VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
The BTA/BTB16 B triac family are high perform-
ance glass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where high surge current capability is re-
quired. Application such as phase control and
static switching on inductive or resistive load.
ABSOLUTE RATINGS
(limiting values)
Symbol
IT(RMS)
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current
( Tj initial = 25°C )
I2t value
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
Parameter
BTA
BTB
ITSM
Tc = 80
°C
Tc = 90
°C
tp = 8.3 ms
tp = 10 ms
I2t
dI/dt
tp = 10 ms
Repetitive
F = 50 Hz
Non
Repetitive
Tstg
Tj
Tl
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Parameter
400
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°C
400
BTA / BTB16-... B
600
600
700
700
800
800
V
170
160
128
10
50
- 40 to + 150
- 40 to + 125
260
°C
°C
°C
A2s
A/µs
A
Value
16
Unit
A
A1
A2
G
TO220AB
(Plastic)
Symbol
Unit
March 1995
1/5
BTA16 B / BTB16 B
THERMAL RESISTANCES
Symbol
Rth (j-a)
Junction to ambient
BTA
BTB
Rth (j-c) AC Junction to case for 360° conduction angle
( F= 50 Hz)
BTA
BTB
Parameter
Value
60
2.9
2.3
2.2
1.75
°C/W
Unit
°C/W
°C/W
Rth (j-c) DC Junction to case for DC
GATE CHARACTERISTICS
(maximum values)
PG (AV) = 1W
PGM = 10W (tp = 20
µs)
IGM = 4A (tp = 20
µs)
VGM = 16V (tp = 20
µs).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Suffix
B
IGT
VD=12V
(DC)
RL =33Ω
Tj=25°C
I-II-III
IV
VGT
VGD
tgt
IL
VD=12V
(DC)
RL=33Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
I-II-III-IV
I-II-III-IV
I-II-III-IV
I-III-IV
II
IH *
VTM *
IDRM
IRRM
dV/dt *
IT= 500mA gate open
ITM= 22.5A tp= 380µs
VDRM
VRRM
Rated
Rated
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
MAX
MAX
MAX
MAX
MIN
MAX
MAX
MAX
MIN
TYP
TYP
50
100
1.5
0.2
2
40
70
50
1.6
0.01
2
250
V/µs
mA
V
mA
V
V
µs
mA
mA
Unit
VD=VDRM R L=3.3kΩ
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
IG=1.2 IGT
Linear slope up to VD =67%VDRM
gate open
(dI/dt)c = 7A/ms
(dV/dt)c *
Tj=125°C
MIN
10
V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
2/5
BTA16 B / BTB16 B
Fig.1 :
Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.2 :
Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTA).
Fig.3 :
Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTB).
Fig.4 :
RMS on-state current versus case temperature.
Fig.5 :
Relative variation of thermal impedance versus
pulse duration.
Fig.6 :
Relative variation of gate trigger current and
holding current versus junction temperature.
Zth/Rth
1
Zt h( j-c)
0.1
Zt h(j-a)
tp( s)
0.01
1E-3
1E-2
1E-1
1E +0
1 E +1
1 E +2 5 E +2
3/5
BTA16 B / BTB16 B
Fig.7 :
Non Repetitive surge peak on-state current
versus number of cycles.
Fig.8 :
Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t
≤
10ms, and
corresponding value of I2 t.
Fig.9 :
On-state characteristics (maximum values).
4/5
BTA16 B / BTB16 B
PACKAGE MECHANICAL DATA
TO220AB Plastic
REF.
A
G
I
D
B
J
H
F
O
P
L
C
M
=
N
=
A
B
C
D
F
G
H
I
J
L
M
N
O
P
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
10.20
10.50
0.401
0.413
14.23
15.87
0.560
0.625
12.70
14.70
0.500
0.579
5.85
6.85
0.230
0.270
4.50
0.178
2.54
3.00
0.100
0.119
4.48
4.82
0.176
0.190
3.55
4.00
0.140
0.158
1.15
1.39
0.045
0.055
0.35
0.65
0.013
0.026
2.10
2.70
0.082
0.107
4.58
5.58
0.18
0.22
0.80
1.20
0.031
0.048
0.64
0.96
0.025
0.038
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
©
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
京公网安备 11010802033920号
EEWORLD
