1N5407 datasheet, PDF - EEWORLD Datasheet

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1N5407: Description3 A, SILICON, RECTIFIER DIODE, DO-201AD; Categorysemiconductor Discrete semiconductor; File Size225KB，2 Pages; ManufacturerDCCOM [ DC COMPONENTS ]

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3 A, SILICON, RECTIFIER DIODE, DO-201AD

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DC COMPONENTS CO., LTD.

R

1N5400

THRU

1N5408

RECTIFIER SPECIALISTS

TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 3.0 Amperes

FEATURES

*

Low cost

Low leakage

Low forward voltage drop

High current capability

DO-27

MECHANICAL DATA

*

Case: Molded plastic

Epoxy: UL 94V-0 rate flame retardant

Lead: MIL-STD-202E, Method 208 guaranteed

Polarity: Color band denotes cathode end

Mounting position: Any

Weight: 1.18 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

o

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375*(9.5mm) lead length at T

L

= 105

o

C

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC Method)

Maximum Instantaneous Forward Voltage at 3.0A DC

Maximum DC Reverse Current

@T

A

= 25

o

C

at Rated DC Blocking Voltage

@T

A

= 100

o

C

Maximum Full Load Reverse Current Average, Full Cycle

.375*(9.5mm) lead length at T

L

= 75

o

C

Typical Junction Capacitance (Note)

Typical Thermal Resistance

Operating and Storage Temperature Range

NOTES : Measured at 1 MH

Z

and applied reverse voltage of 4.0 volts

V

RRM

V

RMS

V

DC

I

O

I

FSM

V

F

1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408

50

35

50

100

70

100

200

140

200

400

280

400

3.0

200

1.1

5.0

500

30

600

420

600

800

560

800

1000

700

1000

UNITS

Volts

Amps

Volts

uAmps

pF

0

I

R

C

J

R

θ

JA

T

J

, T

STG

40

30

-65 to + 175

C/ W

0

C

112

1N5407 Related Products

	1N5407	1N5401	1N5400	1N5402	1N5404	1N5406	1N5408
Description	3 A, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 600 V, SILICON, RECTIFIER DIODE	RECTIFIER DIODE,1KV V(RRM),DO-204AE
Number of terminals	-	2	2	2	2	2	-
Number of components	-	1	1	1	1	1	-
Processing package description	-	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	GREEN, PLASTIC PACKAGE-2	LEAD FREE, PLASTIC, CASE 267-05, 2 PIN	-
state	-	ACTIVE	ACTIVE	DISCONTINUED	ACTIVE	DISCONTINUED	CONSULT MFR
packaging shape	-	round	round	round	round	round	-
Package Size	-	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	-
Terminal form	-	Wire	Wire	Wire	Wire	Wire	-
terminal coating	-	tin	MATTE Tin	tin lead	PURE Tin	MATTE Tin	-
Terminal location	-	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	-
Packaging Materials	-	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	-
structure	-	single	single	single	single	single	-
Shell connection	-	isolation	isolation	isolation	isolation	isolation	-
Diode component materials	-	silicon	silicon	silicon	silicon	silicon	-
Diode type	-	rectifier diode	rectifier diode	rectifier diode	rectifier diode	rectifier diode	rectifier diode
application	-	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	EFFICIENCY	GENERAL PURPOSE	-
Phase	-	1	1	1	1	1	-
Maximum repetitive peak reverse voltage	-	100 V	50 V	200 V	400 V	600 V	-
Maximum average forward current	-	3 A	3 A	3 A	3 A	3 A	-
Maximum non-repetitive peak forward current	-	200 A	200 A	200 A	200 A	200 A	-

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