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1N5416

Description
3 A, 100 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size51KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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1N5416 Overview

3 A, 100 V, SILICON, RECTIFIER DIODE

1N5415 THRU 1N5420
GLASS PASSIVATED FAST SWITCHING RECTIFIER
Reverse Voltage -
50 to 600 Volts
Forward Current -
3.0 Amperes
FEATURES
E
D
Case Style G4
0.180 (4.6)
0.115 (2.9)
DIA.
1.0 (25.4)
MIN.
0.300 (7.6)
MAX.
Glass passivated cavity-free junction
High temperature metallurgically bonded construction
Hermetically sealed package
Capable of meeting
environmental
standards of
MIL-S-19500
Fast switching for
high efficiency
High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
P
A
T
E
N
T
0.042 (1.07)
0.038 (0.962)
DIA.
1.0 (25.4)
MIN.
*
MECHANICAL DATA
Case:
Solid glass body
Terminals:
Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.037 ounce, 1.04 grams
Dimensions in inches and (millimeters)
*
Brazed-lead assembly is covered by Patent No. 3,930,306
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
UNITS
*Maximum repetitive peak reverse voltage
Maximum RMS voltage
*Maximum DC blocking voltage
*Minimum reverse breakdown voltage at 50µA
*Maximum average forward rectified current
0.375” (9.5mm) lead lengths atT
A
=55°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) at T
A
=100°C
Maximum instantaneous forward voltage at 3.0A*
9.0A
Maximum DC reverse current
at rated DC blocking voltage
*T
A
=25°C
T
A
=100°C
*T
A
=175°C
V
RRM
V
RMS
V
DC
V
BR
I
(AV)
50
35
50
55
100
70
100
110
200
140
200
220
3.0
400
280
400
440
500
350
500
550
600
420
600
660
Volts
Volts
Volts
Volts
Amps
I
FSM
80.0
1.10
1.50
1.0
20.0
2.0
150
200
175
150
22.0
-65 to +175
120
250
110
400
100
Amps
V
F
Volts
µA
ns
pF
°C/W
°C
I
R
t
rr
C
J
R
ΘJA
T
J
,T
STG
*Maximum reverse recovery time
(NOTE 1)
*Maximum junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE3)
*Operating and storage temperature range
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
= 1.0A, Irr=0.25A
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 12.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, with both leads to heat sink
*JEDEC registered values
4/98

1N5416 Related Products

1N5416 1N5415 1N5417 1N5418 1N5419 1N5420
Description 3 A, 100 V, SILICON, RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE 3 A, 500 V, SILICON, RECTIFIER DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE
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