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RDF06

Description
1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size124KB,2 Pages
ManufacturerFCI [First Components International]
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RDF06 Overview

1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

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Data Sheet
1.0 Amp FAST RECOVERY
SINGLE PHASE SILICON BRIDGE
Mechanical Dimensions
AC
AC
RDF005 . . . 08 Series
Description
Add Suffix “S” for SMD.
Example: RDF-04M“S” = 400V/1 Amp SMD Part
Mechanical Data:
Terminal Leads - Solderable per Mil Std. 202. Polarity - Molded
on Case. Mounting Position - Any. Weight - 0.04 Ounces, 1 Gram.
Features
n
COMPACT SIZE
n
LOW LEAKAGE CURRENT
n
50 AMP SURGE OVERLOAD RATING
n
UNDERWRITERS LABORATORIES
RECOGNIZED
n
MEETS UL SPECIFICATION 94V-0
Electrical Characteristics @ 25
o
C.
Maximum Ratings
Peak Repetitive Reverse Voltage...V
RRM
RMS Reverse Voltage...V
R(rms)
DC Blocking Voltage...V
DC
Average Forward Rectified Current...I
F(av)
T
A
= 40°C
Non-Repetitive Peak Forward Surge Current...I
FSM
8.3 mS Single ½ Sine Wave Imposed on Rated Load
Point Rating for Fusing...(T < 8.3 mS)
Forward Voltage...V
F
Bridge Element @ 1.0 Amp
DC Reverse Current...I
R
@ Rated DC Blocking Voltage
Reverse Recovery Time...t
RR
(Note 1)
Typical Thermal Resistance...R
θJC
Operating & Storage Temperature Range...T
J
, T
STRG
T
J
= 25°C
T
J
=125°C
T
C
= 25°C
RDF005 . . . 08 Series
RDF005
50
35
50
RDF01
100
70
100
RDF02
200
140
200
RDF04
400
280
400
RDF06
600
420
600
RDF08
800
560
800
Units
Volts
Volts
Volts
Amps
Amps
A
2
S
Volts
............................................. 1.0 ...............................................
............................................. 50 ...............................................
............................................. 5.0 ...............................................
............................................. 1.3 ...............................................
............................................. 10 ...............................................
............................................. 1.0 ...............................................
200
200
200
350
350
350
µA
mA
nS
°C
/ W
°C
............................................. 40 ...............................................
......................................... -55 to 150 ..........................................
Page 3-5
Data Sheet
1.0 Amp FAST RECOVERY
SINGLE PHASE SILICON BRIDGE
Non-Repetitive
Peak Forward Surge Current
60
50
1.0
Forward Current Derating Curve
Amps
.5
40
30
20
10
20
4 0 6 0 8 0 100 120 140 160
Ambient Temperature (°C)
°
0
2
4 6
10
20
60
100
Number of Cycles @ 60 HZ
Typical Instantaneous Forward Characteristics
Typical Reverse Characteristics
1
Amps
µ
Amps
1.0
T
J
= 25°C
°
.1
.01
. 2 . 4 . 6 . 8 1.0 1.2 1.4
Volts
Typical Junction Capacitance
100
.01
.1
120
0
60
Percent of Rated Peak Voltage
Electrical Description
10
5
T
J
= 25
°
C
F = 1 MHZ
V
SIG
= 50m Vpp
1
10
100
Reverse Voltage (Volts)
AC In
Ratings at
25 Deg. C ambient
temperature
unless otherwise
specified.
pF
DC Out
Single Phase Half
Wave, 60 HZ
Resistive or
Inductive Load.
For Capacitive
Load, Derate
Current by 20%.
NOTES:
1. Reverse Recovery Cond., I
F
= .5A, I
R
= 1.0A, I
RR
= .25A.
Page 3-6
RDF005 . . . 08 Series
Amps
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