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RB411D

Description
0.5 A, 20 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size106KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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RB411D Overview

0.5 A, 20 V, SILICON, SIGNAL DIODE

MCC
Features
  omponents
21201 Itasca Street Chatsworth

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RB400D
THRU
RB411D

Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and ESD Protection
0.5 Amp Surface Mount
Schottky Barrier Diode
Mechanical Data
Case :SOT-346,Molded Plastic
Terminals :Solderable per MIL-STD-202,Method 208
Polarity :See Diagrams Below
Weight :0.008 grams (approx)
Mountion Position :Any
S
2
20 to 40 Volts
SOT-346
A
L
3
1
Maximum Ratings
Operating Temperature: -25°C to +125°C
Storage Temperature: -50°C to +125°C
MCC
Catalog
Number
RB411 D
RB400 D
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
20V
40V
Maximum
RMS
Voltage
14V
28V
Maximum
DC
Blocking
Voltage
20V
40V
B
3
CATHODE
2
ANODE
D
G
C
H
DIMENSIONS
INCHES
DIM
A
B
C
D
G
H
J
K
L
S
MIN
.106
.051
.039
.014
.067
.000
.004
.008
.049
.089
MAX
.122
.067
.051
.020
.091
.004
.010
.024
.065
.118
MIN
2.70
1.30
1.00
0.35
1.70
0.00
0.10
0.20
1.25
2.25
MM
MAX
3.10
1.70
1.30
0.50
2.30
0.10
0.26
0.60
1.65
3.00
NOTE
J
K
05T
05F
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
RB411D
RB400D
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
F(AV)
I
FSM
0.5A
3A
T
A
=
90°C
8.3ms, half sine
Suggested Solder
Pad Layout
.031
.800
V
F
0.45V
0.53V
100µΑ
4.0mA
I
FM
= 0.5A
T
J
= 25°C
T
J
= 25°C
T
J
= 100°C
.039
1.000
0.098-0.118
2.5-3.0
.094
2.400
inches
mm
I
R
.037
.950
.037
.950
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
www.mccsemi.com

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