STD13NM50N
Datasheet
N-channel 500 V, 0.285 Ω typ., 12 A MDmesh™ II Power MOSFET
in a DPAK package
Features
TAB
2 3
1
Order codes
STD13NM50N
V
DS
500 V
R
DS(on)
max.
0.320 Ω
I
D
12 A
DPAK
•
•
•
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
D(2, TAB)
Applications
•
G(1)
Switching applications
Description
S(3)
AM01475v1_noZen
This device is an N-channel Power MOSFET developed using the second generation
of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical
structure to the company’s strip layout to yield one of the world’s lowest on-resistance
and gate charge. It is therefore suitable for the most demanding high efficiency
converters.
Product status links
STD13NM50N
Product summary
Order code
Marking
Package
Packing
STD13NM50N
13NM50N
DPAK
Tape and reel
DS12790
-
Rev 1
-
October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STD13NM50N
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
V
DS
V
GS
I
D
I
DM
(1)
P
TOT
dv/dt
(2)
T
stg
T
j
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
case
= 25 °C
Drain current (continuous) at T
case
= 100 °C
Drain current (pulsed)
Total power dissipation at T
case
= 25 °C
Peak diode recovery voltage slope
Storage temperature range
Operating junction temperature range
Parameter
Value
500
±25
12
8
48
90
15
-55 to 150
Unit
V
V
A
A
W
V/ns
°C
1. Pulse width limited by safe operating area.
2. I
SD
≤ 12 A, di/dt ≤ 400 A/μs, V
DS(Peak)
≤ V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
.
Table 2.
Thermal data
Symbol
R
thj-case
R
thj-pcb
(1)
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Value
1.39
50
Unit
°C/W
°C/W
1. When mounted on an 1 inch² FR-4, 2 Oz copper board.
Table 3.
Avalanche characteristics
Symbol
I
AR
E
AS
Parameter
Avalanche current, repetitive or non-repetitive (pulse width limited by T
Jmax
)
Single pulse avalanche energy (starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Value
4
172
Unit
A
mJ
DS12790
-
Rev 1
page 2/18
STD13NM50N
Electrical characteristics
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
Test conditions
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 500 V
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 500 V,
T
case
= 125 °C
(1)
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 6 A
2
3
0.285
Min.
500
1
100
±100
4
0.320
µA
Typ.
Max.
Unit
V
I
GSS
V
GS(th)
R
DS(on)
Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance
nA
V
Ω
1. Defined by design, not subject to production test.
Table 5.
Dynamic
Symbol
C
iss
C
oss
C
rss
C
oss eq.
(1)
R
G
Q
g
Q
gs
Q
gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 0 to 400 V, V
GS
= 0 V
f = 1 MHz, I
D
= 0 A
V
DD
= 400 V, I
D
= 12 A,
V
GS
= 0 to 10 V
(see
Figure 13. Test circuit for gate
charge behavior)
V
DS
= 50 V, f = 1 MHz, V
GS
= 0 V
Test conditions
Min.
-
-
-
-
-
-
-
-
Typ.
816
60
3
308
4.5
27
5
15
Max.
-
-
-
-
-
-
-
-
nC
pF
Ω
pF
Unit
1. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0
to 80% V
DSS
.
Table 6.
Switching times
Symbol
t
d(on)
t
r
t
d(off)
t
f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 250 V, I
D
= 6 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see
Figure 12. Test circuit for
resistive load switching times
and
Figure 17. Switching time
waveform)
Min.
-
-
-
-
Typ.
12
16
42
22
Max.
-
-
-
-
ns
Unit
DS12790
-
Rev 1
page 3/18
STD13NM50N
Electrical characteristics
Table 7.
Source-drain diode
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
V
GS
= 0 V, I
SD
= 12 A
I
SD
= 12 A, di/dt = 100 A/µs,
V
DD
= 60 V
(see
Figure 14. Test circuit for
inductive load switching and diode
recovery times)
I
SD
= 12 A, di/dt = 100 A/µs,
V
DD
= 60 V, T
j
= 150 °C
(see
Figure 14. Test circuit for
inductive load switching and diode
recovery times)
Test conditions
Min.
-
-
-
-
-
-
-
-
-
252
2.8
22
300
3.3
22.2
Typ.
Max.
12
48
1.6
Unit
A
A
V
ns
μC
A
ns
μC
A
1. Pulse width is limited by safe operating area.
2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DS12790
-
Rev 1
page 4/18
STD13NM50N
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
I
D
(A)
AM07200v1
Figure 2.
Thermal impedance
K
GC20460
10µs
Op
er
mi ation
ted
i
by n thi
ma s a
x R rea
10
DS
(o
n)
10
0
100µs
Li
is
1
1ms
Tj=150°C
Tc=25°C
Single pulse
10
-1
10ms
0.1
0.1
1
10
100
V
DS
(V)
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
Figure 3.
Output characteristics
I
D
(A)
25
20
15
10
5
0
5V
AM07202v1
Figure 4.
Transfer characteristics
I
D
(A)
25
V
DS
=18V
20
15
10
5
0
AM07203v1
V
GS
=10V
6V
0
5
10
15
20
V
DS
(V)
0
2
4
6
8
10 V
GS
(V)
Figure 5.
Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm)
Figure 6.
Static drain-source on-resistance
AM07205v1
AM09028v1
1.10
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25
I
D
=1mA
R
DS(on)
(Ohm)
0.300
0.295
0.290
0.285
0.280
0.275
0.270
0
25
50
75
100
T
J
(°C)
0.265
0
2
4
V
GS
=10V
6
8
10
12
I
D
(A)
DS12790
-
Rev 1
page 5/18
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