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MT47H128M8SH-25E:M TR

Description
Dynamic Random Access Memory DDR2 1G 128MX8 FBGA
Categorysemiconductor    Memory IC    Dynamic random access memory   
File Size2MB,142 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance
Download Datasheet Parametric View All

MT47H128M8SH-25E:M TR Overview

Dynamic Random Access Memory DDR2 1G 128MX8 FBGA

MT47H128M8SH-25E:M TR Parametric

Parameter NameAttribute value
MakerMicron
Product Categorydynamic random access memory
typeSDRAM - DDR2
Data bus width8 bit
organize128 M x 8
Package/boxFBGA-60
storage1 Gbit
maximum clock frequency400 MHz
Supply voltage - max.1.9 V
Supply voltage - min.1.7 V
Supply current—max.210 mA
Minimum operating temperature0 C
Maximum operating temperature+ 85 C
seriesMT47H
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
Installation styleSMD/SMT
Factory packaging quantity2000
1Gb: x4, x8, x16 DDR2 SDRAM
Features
DDR2 SDRAM
MT47H256M4 – 32 Meg x 4 x 8 banks
MT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks
Features
V
DD
= 1.8V ±0.1V, V
DDQ
= 1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
8 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Selectable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Industrial temperature (IT) option
Automotive temperature (AT) option
RoHS-compliant
Supports JEDEC clock jitter specification
Options
1
• Configuration
– 256 Meg x 4 (32 Meg x 4 x 8 banks)
– 128 Meg x 8 (16 Meg x 8 x 8 banks)
– 64 Meg x 16 (8 Meg x 16 x 8 banks)
• FBGA package (Pb-free) – x16
– 84-ball FBGA (8mm x 12.5mm) Die
Rev :H
– 84-ball FBGA (8mm x 12.5mm) Die
Rev :M
• FBGA package (Pb-free) – x4, x8
– 60-ball FBGA (8mm x 10mm) Die
Rev :H
– 60-ball FBGA (8mm x 10mm) Die
Rev :M
• FBGA package (lead solder) – x16
– 84-ball FBGA (8mm x 12.5mm) Die
Rev :H
• FBGA package (lead solder) – x4, x8
– 60-ball FBGA (8mm x 10mm) Die
Rev :H
• Timing – cycle time
– 1.875ns @ CL = 7 (DDR2-1066)
– 2.5ns @ CL = 5 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
• Self refresh
– Standard
– Low-power
• Operating temperature
– Commercial (0°C T
C
+85°C)
2
– Industrial (–40°C T
C
+95°C;
–40°C T
A
+85°C)
• Revision
Notes:
Marking
256M4
128M8
64M16
HR
NF
CF
SH
HW
JN
-187E
-25E
-3
None
L
None
IT
:H / :M
1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on www.micron.com for
product offerings and availability.
2. For extended CT operating temperature see
IDD Table 11 (page 32) Note 7.
CCMTD-1725822587-9658
1GbDDR2.pdf – Rev. AB 09/18 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2007 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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