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MT47H128M8SH-25E AAT:M TR

Description
Dynamic Random Access Memory DDR2 1G 128MX8 FBGA
Categorysemiconductor    Memory IC    Dynamic random access memory   
File Size11MB,130 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance
Download Datasheet Parametric View All

MT47H128M8SH-25E AAT:M TR Overview

Dynamic Random Access Memory DDR2 1G 128MX8 FBGA

MT47H128M8SH-25E AAT:M TR Parametric

Parameter NameAttribute value
MakerMicron
Product Categorydynamic random access memory
typeSDRAM - DDR2
Data bus width8 bit
organize128 M x 8
Package/boxFBGA-60
storage1 Gbit
maximum clock frequency800 MHz
Supply voltage - max.1.9 V
Supply voltage - min.1.7 V
Supply current—max.95 mA
Minimum operating temperature- 40 C
Maximum operating temperature+ 105 C
seriesMT47H
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
Installation styleSMD/SMT
Factory packaging quantity2000
1Gb: x8, x16 Automotive DDR2 SDRAM
Features
Automotive DDR2 SDRAM
MT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks
Features
V
DD
= 1.8V ±0.1V, V
DDQ
= 1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
8 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Selectable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
RoHS-compliant
Supports JEDEC clock jitter specification
AEC-Q100
PPAP submission
8D response time
Options
1
• Configuration
– 128 Meg x 8 (16 Meg x 8 x 8 banks)
– 64 Meg x 16 (8 Meg x 16 x 8 banks)
• FBGA package (Pb-free) – x16
– 84-ball FBGA (8mm x 12.5mm) Die
Rev :M
• FBGA package (Pb-free) – x8
– 60-ball FBGA (8mm x 10mm) Die
Rev :M
• Timing – cycle time
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
• Special option
– Standard
– Automotive grade
• Operating temperature
– Industrial (–40°C
T
C
+95°C)
– Automotive (–40°C
T
C
+105°C)
• Revision
Note:
Marking
128M8
64M16
NF
SH
-25E
-25
-3
None
A
IT
AT
:M
1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on www.micron.com for
product offerings and availability.
Table 1: Key Timing Parameters
Data Rate (MT/s)
Speed Grade
-25E
-25E
-3
CL = 3
400
400
400
CL = 4
533
533
533
CL = 5
800
667
667
CL = 6
800
800
n/a
CL = 7
n/a
n/a
n/a
t
RC
(ns)
55
55
55
Table 2: Addressing
Parameter
Configuration
Refresh count
Row address
128 Meg x 8
16 Meg x 8 x 8 banks
8K
A[13:0] (16K)
64 Meg x 16
8 Meg x 16 x 8 banks
8K
A[12:0] (8K)
PDF: 09005aef85a711f4
1gb_ddr2_ait-aat_u88b.pdf – Rev. C 6/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
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