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MT47H256M8EB-25E IT:C TR

Description
Dynamic Random Access Memory DDR2 2G 256MX8 FBGA
Categorysemiconductor    Memory IC    Dynamic random access memory   
File Size2MB,136 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance
Download Datasheet Parametric View All

MT47H256M8EB-25E IT:C TR Overview

Dynamic Random Access Memory DDR2 2G 256MX8 FBGA

MT47H256M8EB-25E IT:C TR Parametric

Parameter NameAttribute value
MakerMicron
Product Categorydynamic random access memory
typeSDRAM - DDR2
Data bus width8 bit
organize256 M x 8
Package/boxFBGA-60
storage2 Gbit
maximum clock frequency800 MHz
Supply voltage - max.1.9 V
Supply voltage - min.1.7 V
Supply current—max.105 mA
Minimum operating temperature- 40 C
Maximum operating temperature+ 85 C
seriesMT47H
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
Installation styleSMD/SMT
Factory packaging quantity1000
2Gb: x4, x8, x16 DDR2 SDRAM
Features
DDR2 SDRAM
MT47H512M4 – 64 Meg x 4 x 8 banks
MT47H256M8 – 32 Meg x 8 x 8 banks
MT47H128M16 – 16 Meg x 16 x 8 banks
Features
V
DD
= 1.8V ±0.1V, V
DDQ
= 1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
8 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Programmable burst lengths: 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Industrial temperature (IT) option
RoHS-compliant
Supports JEDEC clock jitter specification
Options
1
• Configuration
– 512 Meg x 4 (64 Meg x 4 x 8 banks)
– 256 Meg x 8 (32 Meg x 8 x 8 banks)
– 128 Meg x 16 (16 Meg x 16 x 8 banks)
• FBGA package (Pb-free) – x16
– 84-ball FBGA (11.5mm x 14mm) Rev. A
• FBGA package (Pb-free) – x4, x8
– 60-ball FBGA (11.5mm x 14mm) Rev. A
• FBGA package (Pb-free) – x16
– 84-ball FBGA (9mm x 12.5mm) Rev. C
• FBGA package (Pb-free) – x4, x8
– 60-ball FBGA (9mm x 11.5mm) Rev. C
• FBGA package (Lead solder) – x16
– 84-ball FBGA (9mm x 12.5mm) Rev. C
• Timing – cycle time
– 1.875ns @ CL = 7 (DDR2-1066)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
• Self refresh
– Standard
• Operating temperature
– Commercial (0°C T
C
+85°C)
– Industrial (–40°C T
C
+95°C;
–40°C T
A
+85°C)
• Revision
Note:
Marking
512M4
256M8
128M16
HG
HG
RT
EB
PK
-187E
-25E
-25
-3
None
None
IT
:A/:C
1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on
www.micron.com
for
product offerings and availability.
CCMTD-1725822587-6523
2Gb_DDR2.pdf – Rev. J 09/18 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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