16Gb: x16 TwinDie Single Rank DDR4 SDRAM
Description
TwinDie™ 1.2V DDR4 SDRAM
MT40A1G16 – 64 Meg x 16 x 16 Banks x 1 Ranks
Description
The 16Gb (TwinDie™) DDR4 SDRAM uses
Micron’s 8Gb DDR4 SDRAM die; two x8s combined to
make one x16. Similar signals as mono x16, there is
one extra ZQ connection for faster ZQ Calibration and
a BG1 control required for x8 addressing. Refer to Mi-
cron’s 8Gb DDR4 SDRAM data sheet (x8 option) for
the specifications not included in this document.
Specifications for base part number MT40A1G8 corre-
late to TwinDie manufacturing part number
MT40A1G16.
Options
• Configuration
– 64 Meg x 16 x 16 banks x 1 rank
• 96-ball FBGA package (Pb-free)
– 9.5mm x 14mm x 1.2mm Die Rev :A
– 8.0mm x 14mm x 1.2mm Die Rev :B,
D
– 7.5mm x 13.5mm x 1.2mm Die Rev :E
• Timing – cycle time
1
– 0.625ns @ CL = 22 (DDR4-3200)
– 0.682ns @ CL = 21 (DDR4-2933)
– 0.750ns @ CL = 19 (DDR4-2666)
– 0.750ns @ CL = 18 (DDR4-2666)
– 0.833ns @ CL = 17(DDR4-2400)
– 0.833ns @ CL = 16 (DDR4-2400)
– 0.937ns @ CL = 15 (DDR4-2133)
– 1.071ns @ CL = 13 (DDR4-1866)
• Self refresh
– Standard
• Operating temperature
– Commercial (0°C
≤
T
C
≤
95°C)
• Revision
Marking
1G16
HBA
WBU
KNR
-062E
-068
-075
-075E
-083
-083E
-093E
-107E
None
None
:A
:B, D
:E
Features
•
•
•
•
•
•
•
Uses two x8 8Gb Micron die to make one x16
Single rank TwinDie
V
DD
= V
DDQ
= 1.2V (1.14–1.26V)
1.2V V
DDQ
-terminated I/O
JEDEC-standard ball-out
Low-profile package
T
C
of 0°C to 95°C
– 0°C to 85°C: 8192 refresh cycles in 64ms
– 85°C to 95°C: 8192 refresh cycles in 32ms
Note:
1. CL = CAS (READ) latency.
Table 1: Key Timing Parameters
Speed Grade
-062E
1
-068
1
-075
2
-075E
2
-083
3
-083E
3
-093E
4
-107E
5
Notes:
1.
2.
3.
4.
5.
Data Rate (MT/s)
3200
2933
2666
2666
2400
2400
2133
1866
Target
t
RCD-
t
RP-CL
22-22-22
21-21-21
19-19-19
18-18-18
17-17-17
16-16-16
15-15-15
13-13-13
t
RCD
(ns)
t
RP
(ns)
CL (ns)
13.75
14.32
14.25
13.5
14.16
13.32
14.06
13.92
13.75
14.32
14.25
13.5
14.16
13.32
14.06
13.92
13.75
14.32
14.25
13.5
14.16
13.32
14.06
13.92
Backward compatible to 1600, CL = 11; 1866, CL = 13; 2133, CL = 15; 2400, CL = 17; and 2666, CL = 19.
Backward compatible to 1600, CL = 11; 1866, CL = 13; 2133, CL = 15; and 2400, CL = 17.
Backward compatible to 1600, CL = 11; 1866, CL = 13; and 2133, CL = 15.
Backward compatible to 1600, CL = 11 and 1866, CL = 13.
Backward compatible to 1600, CL = 11.
CCMTD-1725822587-9947
DDR4_16Gb_x16_1CS_TwinDie.pdf - Rev. F 10/17 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
16Gb: x16 TwinDie Single Rank DDR4 SDRAM
Description
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CCMTD-1725822587-9947
DDR4_16Gb_x16_1CS_TwinDie.pdf - Rev. F 10/17 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.