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BFP420E6433

Description
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, X Band, Silicon, NPN
CategoryThe transistor   
File Size556KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BFP420E6433 Overview

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, X Band, Silicon, NPN

BFP420E6433 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresLOW NOISE, HIGH RELIABILITY
Shell connectionEMITTER
Maximum collector current (IC)0.035 A
Collector-based maximum capacity0.24 pF
Collector-emitter maximum voltage4.5 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)50
highest frequency bandX BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.16 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)25000 MHz
Base Number Matches1
BFP420
Low Noise Silicon Bipolar RF Transistor
For high gain and low noise amplifiers
Minimum noise figure
NF
min
= 1.1 dB at 1.8 GHz
Outstanding
G
ms
= 21 dB at 1.8 GHz
For oscillators up to 10 GHz
Transition frequency
f
T
= 25 GHz
Pb-free (RoHS compliant) and halogen-free package
with visible leads
Qualification report according to AEC-Q101 available
3
4
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFP420
Marking
AMs
1=B
Pin Configuration
2=E
3=C
4=E
-
-
Package
SOT343
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
Value
Unit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
4.5
4.1
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
98 °C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
15
15
1.5
60
9
210
150
-55 ... 150
mW
°C
mA
Junction temperature
Storage temperature
1
T
S
is
measured on the emitter lead at the soldering point to the pcb
Thermal Resistance
Parameter
Symbol
R
thJS
1
Value
Unit
Junction - soldering point
1)
250
K/W
2013-09-19

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Description RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, X Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, X Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4 RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, X Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4 RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, X Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4
Maker Infineon Infineon Infineon Infineon
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code compliant compliant compliant compliant
Other features LOW NOISE, HIGH RELIABILITY HIGH RELIABILITY, LOW NOISE HIGH RELIABILITY, LOW NOISE HIGH RELIABILITY, LOW NOISE
Maximum collector current (IC) 0.035 A 0.035 A 0.035 A 0.035 A
Collector-based maximum capacity 0.24 pF 0.3 pF 0.3 pF 0.3 pF
Collector-emitter maximum voltage 4.5 V 4.5 V 4.5 V 4.5 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE SINGLE SINGLE
highest frequency band X BAND X BAND X BAND X BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1 1
Number of terminals 4 4 4 4
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 25000 MHz 25000 MHz 25000 MHz 25000 MHz
Is it Rohs certified? conform to conform to conform to -
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED NOT SPECIFIED -
Maximum time at peak reflow temperature 40 NOT SPECIFIED NOT SPECIFIED -
Guideline - AEC-Q101 AEC-Q101 AEC-Q101
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