®
D3S080N65
650V, 80mΩ, 29.1A N-Channel Enhancement Mode Super Junction Power MOSFET
Ordering Information
Part Number
D3S080N65B-U
D3S080N65D-U
D3S080N65E-U
Package Options
Package Option
TO-220
TO-247
TO-263
TO-220
TO-263
TO-247
Description
+FET
TM
is an advanced Super Junction Power MOSFET offering
excellent efficiency through low Rds-ON and low gate
charge. +FET
TM
is a rugged device with precision charge
balance implementation designed for demanding uses such as
enterprise power computing power supplies, motor control,
lighting and other challenging power conversion applications.
Device Schematic
Drain (Pin 2, Tab)
Gate
(Pin 1)
Source
(Pin 3)
Features
LOW R
DS(ON)
FAST SWITCHING
HIGH E
AS
REL TEST SPEC: JESD-22
HTRB >3000 HRS
Benefits
LOW CONDUCTION LOSSES
HIGH EFFICIENCY
EXCELLENT AVALANCHE PERFORMANCE
Table 1
Key Maximum Parameters
Parameter
V
DSS
@ T
jmax
RDS(on) max
Qg typ
I
D
@
25 ºC
Applications
Unit
V
mΩ
nC
A
Value
710
< 80
77
44.9
POWER FACTOR CORRECTION
SERVER POWER SUPPLIES
TELECOM POWER SUPPLIES
INVERTERS
MOTOR CONTROL
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®
D3S080N65
Contents
Contents............................................................................................................................................................... 2
1.
2.
3.
4.
5.
6.
7.
8.
Maximum Ratings ........................................................................................................................................ 3
Thermal Characteristics ............................................................................................................................... 4
Electrical Characteristics .............................................................................................................................. 5
Package Outlines.......................................................................................................................................... 7
Revision History ......................................................................................................................................... 10
Resources ................................................................................................................................................... 10
Patents, Copyrights and Trademarks ......................................................................................................... 10
Legal Disclaimer ......................................................................................................................................... 10
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®
D3S080N65
1. Maximum Ratings
Table 2
Maximum Ratings
@ T
j
= 25
ºC,
unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single
pulse
Avalanche energy, repetitive
Avalanche current, single
pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage
(dynamic)
Power dissipation
Storage temperature
Operating junction
temperature
Mounting torque
Continuous diode forward
current
Diode pulse current
Reverse diode dv/dt
Maximum diode
commutation speed
Symbol
I
D
I
D, pulse
E
AS
E
AR
I
AR
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
Values
Min Typ Max
18.4
29.1
116
320
0.480
4.6
50
-30
-30
30
30
134
-55
-55
150
150
60
Unit
A
A
A
mJ
mJ
A
V/ns
V
V
W
ºC
ºC
N-cm
A
A
V/ns
A/µs
Tc = 25ºC
Tc = 25ºC
T
C
= 100ºC
T
C
= 25ºC
T
C
= 25ºC
Condition
I
D
= 6.1A; V
DD
= 50V, VGS = 10V,
L=17mH, RG=25 Ohms
I
D
= 4.6A; V
DD
= 50V
V
DS
= 0….400V
Static
AC (F>1Hz)
TO-220, TO-263, T
C
= 25ºC
TO-220FP, T
C
= 25ºC
TO-247, T
C
= 25ºC
I
SD
I
S, pulse
dv/dt
di
f
/dt
29.1
116
15
500
V
DS
=0…400V, I
SD
<=I
S
, T
j
= 25ºC
V
DS
=0…400V, I
SD
<=I
S
, T
j
= 25ºC
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®
D3S080N65
2. Thermal Characteristics
Table 3
Thermal Characteristics
Symbol
R
thjC
R
thjA
R
thjT
T
S
Parameter
Thermal resistance, junction-
case
Thermal resistance, junction-
ambient
Thermal resistance, junction-
ambient for SMD version
Soldering temperature,
wavesoldering only allowed
at leads
Values
TO-220
0.93
62
TO-220FP
3.7
62
TO-263
0.93
62
30
TO-247
0.93
50
Unit
ºC
/
W
ºC
/
W
ºC
/
W
260
260
260
260
ºC
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®
D3S080N65
3. Electrical Characteristics
@ T
j
= 25
º
C, unless otherwise specified
Table 4
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
R
DS(on)
Gate resistance
R
G
0.159
1
Ω
Symbol
V
DSS
V
(GS)th
I
DSS
I
GSS
R
DS(on)
Values
Min Typ
Max
650
2.3
3
3.7
1
50
100
0.070
0.080
Unit
V
V
µA
nA
Ω
Condition
I
D
= 1mA, V
GS
= 0V
V
DS
= V
GS,
I
D
= 250µA
V
DS
= 650V, T
C
= 25ºC
V
DS
= 650V, T
C
= 125ºC
V
GS
= 10V, I
D
= 14.5A, T
C
=
25ºC
V
GS
= 10V, I
D
= 14.5A, T
C
=
150ºC
Table 5
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min Typ Max
4240
97.5
16.5
17
24
90
23
Unit
pF
pF
pF
ns
ns
ns
ns
Condition
V
DS
= 100V, f = 1MHz,
V
GS
= 0V
V
DD
= 400V, I
D
= 29.1A
R
G
= 1Ω, V
GS
= 10V
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